GB25RF120K, GB25XF120K, GB25XF120K/1 Selling Leads, Datasheet
MFG:IR Package Cooled:PIM D/C:04+
GB25RF120K, GB25XF120K, GB25XF120K/1 Datasheet download
Part Number: GB25RF120K
MFG: IR
Package Cooled: PIM
D/C: 04+
GB25RF120K, GB25XF120K, GB25XF120K/1
- Table of contents:
Info of GB25RF120K
Info of GB25XF120K
Info of GB25XF120K/1
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About GB25RF120K
PDF/DataSheet Download
Datasheet: GB25RF120K
File Size: 800244 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About GB25XF120K
PDF/DataSheet Download
Datasheet: GB25XF120K
File Size: 220361 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About GB200
PDF/DataSheet Download
Datasheet: GB200
File Size: 143521 KB
Manufacturer: MICROSEMI [Microsemi Corporation]
Download : Click here to Download
GB25RF120K Maximum Ratings
|
Parameter |
Symbol |
Test Conditions |
Ratings |
Units | ||
|
Inverter |
Collector-to-Emitter Voltage |
VCES |
V | |||
| Gate-to-Emitter Voltage |
VGES |
±20 |
||||
| Collector Current |
IC |
Continuous |
25 / 80 |
40 / 25 |
A | |
|
ICM |
25 |
80 | ||||
| Diode Maximum Forward Current |
IFM |
25 |
80 | |||
| Power Dissipation |
PD |
1 device |
25 |
198 |
W | |
|
Input Rectifier |
Repetitive Peak Reverse Voltage |
VRRM |
1600 |
V | ||
| Average Output Current |
IF(AV) |
50/60Hz sine pulse |
80 |
20 |
A | |
| Surge Current (Non Repetitive) |
IFSM |
Rated VRRM applied, 10ms, sine pulse |
250 | |||
| I2t (Non Repetitive) |
I2t |
216 |
A2s | |||
|
Brake |
Collector-to-Emitter Voltage |
VCES |
1200 |
V | ||
| Gate-to-Emitter Voltage |
VGES |
±20 | ||||
| Collector Current |
IC |
Continuous |
25 / 80 |
25 / 15 |
A | |
|
ICM |
25 |
50 | ||||
| Power Dissipation |
PD |
1 device |
25 |
104 |
W | |
| Repetitive Peak Reverse Voltage |
VRRM |
1200 |
V | |||
| Maximum Operating Junction Temperature |
TJ |
- |
- |
150 |
||
|
Storage Temperature Range |
TSTG |
- |
- |
-40 to +125 | ||
| Isolation Voltage |
VISOL |
AC(1min.) |
2500 |
V | ||
| Maximum Power Dissipation | ||||||
GB25RF120K Features
• Low VCE (on) Non Punch Through IGBT Technology
• Low Diode VF
• 10µs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design
• Low Diode VF
• 10µs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design
GB25XF120K Maximum Ratings
|
Parameter |
Max. |
Units | |
|
VCES |
Collector-to-Emitter Breakdown Voltage |
1200 |
V |
|
IC @ TC = 25 |
Continuous Collector Current |
40 |
A |
|
IC @ TC = 80 |
Continuous Collector Current |
25 | |
|
ICM |
Pulsed Collector Current(Ref.Fig.C.T.5) |
80 | |
|
ILM |
Clamped Inductive Load current |
80 | |
| IF @ TC = 25 | Diode Continuous Forward Current |
40 | |
| IF @ TC = 80 | Diode Continuous Forward Current |
25 | |
| IFM | Diode Maximum Forward Current |
80 | |
|
VGE |
Gate-to-Emitter Voltage |
±20 |
V |
|
PD @ TC = 25 |
Maximum Power Dissipation |
198 |
W |
|
PD @ TC = 100 |
Maximum Power Dissipation |
111 | |
|
TJ |
Maximum Operating Junction Temperature |
150 |
|
|
TSTG |
Storage Temperature Range |
-40 to +125 | |
| VISOL | Isolation Voltage |
AC 2500 (1min) |
V |
GB25XF120K Features
• Low VCE (on) Non Punch Through IGBT Technology
• Low Diode VF
• 10µs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design
• Low Diode VF
• 10µs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design
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