GP34, GP350MHB06S, GP35A Selling Leads, Datasheet
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GP34, GP350MHB06S, GP35A
- Table of contents:
Info of GP34
Info of GP350MHB06S
Info of GP35A
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About GP30
PDF/DataSheet Download
Datasheet: GP30
File Size: 63283 KB
Manufacturer: GE [General Semiconductor]
Download : Click here to Download
About GP350MHB06S
PDF/DataSheet Download
Datasheet: GP350MHB06S
File Size: 129368 KB
Manufacturer: DYNEX [Dynex Semiconductor]
Download : Click here to Download
About GP30
PDF/DataSheet Download
Datasheet: GP30
File Size: 63283 KB
Manufacturer: GE [General Semiconductor]
Download : Click here to Download
GP350MHB06S General Description
The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A.
The GP350MHB06S is a half bridge 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm drivesand ups systems.
The GP350MHB06S is a half bridge 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm drivesand ups systems.
GP350MHB06S Maximum Ratings
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25°C unless stated otherwise
| Symbol | Parameter |
Test Conditions |
Max. |
Units |
| VCES | Collector-emitter voltage |
VGE = 0V |
600 |
V |
| VGES | Gate-emitter voltage |
±20 |
V | |
| IC | Collector current |
DC, Tcase = 25°C |
500 |
A |
|
DC, Tcase = 75°C |
350 |
A | ||
| IC(PK) |
1ms, Tcase = 25°C |
1000 |
A | |
|
1ms, Tcase = 75°C |
700 |
A | ||
| Pmax | Maximum power dissipation |
(Transistor) |
1750 |
W |
| Visol | Isolation voltage |
Commoned terminals to base plate. AC RMS, 1 min, 50Hz |
2500 |
V |
GP350MHB06S Features
·n - Channel
·High Switching Speed
·Low Forward Voltage Drop
·Isolated Base
·High Switching Speed
·Low Forward Voltage Drop
·Isolated Base
GP350MHB06S Typical Application
·PWM Motor Control
·UPS
·UPS
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