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GT8G103, GT8G121, GT8G131

Table of contents:
Info of GT8G103
Info of GT8G121
Info of GT8G131

GT8G103, GT8G121, GT8G131 Selling Leads, Datasheet

MFG:TOSHIBA Package Cooled:2008+ROHS D/C:23000

GT8G103, GT8G121, GT8G131 Datasheet download

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Part Number: GT8G103

MFG: TOSHIBA

Package Cooled: 2008+ROHS

D/C: 23000

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GT8G103 Maximum Ratings

CHARACTERISTIC		SYMBOL	RATING	UNIT
Collector−Emitter Voltage		V_CES	400	V
Gate−Emitter Voltage	DC	V_GES	±6	V
Gate−Emitter Voltage	Pulse	V_GES	±8	V
Collector Current	DC	I_C	8	A
Collector Current	1 ms	I_CP	150	A
Collector Power Dissipation	Ta = 25°C	P_C	1.3	W
Collector Power Dissipation	Tc = 25°C	P_C	20	W
Junction Temperature		T_j	150
Storage Temperature Range		T_stg	−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

GT8G103 Features

·􀁺 3rd Generation
·􀁺 Enhancement−Mode
·􀁺 Low Saturation Voltage: V_{CE (sat)} = 8 V (Max.) (@I_C = 150 A)
·􀁺 4.5 V Gate Drive

GT8G121 Maximum Ratings

CHARACTERISTIC		SYMBOL	RATING	UNIT
Collector−Emitter Voltage		V_CES	400	V
Gate−Emitter Voltage	DC	V_GES	±6	V
Gate−Emitter Voltage	Pulse	V_GES	±8	V
Collector Current	DC	I_C	8	A
Collector Current	1 ms	I_CP	150	A
Collector Power Dissipation	Ta = 25°C	P_C	1.1	W
Collector Power Dissipation	Tc = 25°C	P_C	20	W
Junction Temperature		T_j	150
Storage Temperature Range		T_stg	−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

GT8G121 Features

·􀁺 4th Generation (Trench Gate Structure)
·􀁺 Enhancement−Mode
·􀁺 Low Saturation Voltage
: V_{CE (sat)} = 7 V (Max.) (@I_C = 150 A)
·􀁺 4 V Gate Drive

GT8G131 Maximum Ratings

SYMBOL	PARAMETER	RATING	UNIT
V_CES	Collector to base voltage	400	V
V_GES	Collector to emitter voltageDC	±6	V
V_GES	Emitter to base voltagePulse	±8	V
I_C	Collector current DC	8	A
I_CP	Collector current 1 ms	150	A
P_C	Collector power dissipation (Note 1)	1.1	W
T_j	Junction temperature	150
T_stg	Storage temperaturerange	-55 to +150

Note 1: Drive operation: Mount on glass epoxy board [1 inch2 * 1.5 t]
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

GT8G131 Features

• Supplied in Compact and Thin Package Requires Only a Small Mounting Area
• 4th generation (trench gate structure) IGBT
• Enhancement-mode
• 4-V gate drive voltage: V_GE = 4.0 V (min) (@I_C = 150 A)
• Peak collector current: I_C = 150 A (max)

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