HE9013-I, HE9015-C, HE95114C Selling Leads, Datasheet
Package Cooled:TO92 D/C:N/A
HE9013-I, HE9015-C, HE95114C Datasheet download
Part Number: HE9013-I
MFG: --
Package Cooled: TO92
D/C: N/A
Package Cooled:TO92 D/C:N/A
HE9013-I, HE9015-C, HE95114C Datasheet download
MFG: --
Package Cooled: TO92
D/C: N/A
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: HE9012
File Size: 41373 KB
Manufacturer: HSMC [Hi-Sincerity Mocroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HE9012
File Size: 41373 KB
Manufacturer: HSMC [Hi-Sincerity Mocroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HE9012
File Size: 41373 KB
Manufacturer: HSMC [Hi-Sincerity Mocroelectronics]
Download : Click here to Download
The HE9013-I belongs to the HE9013 series. It is a kind of NPN epitaxial planar silicon transistor which is made by the MICROELECTRONICS CORP. It is available in the TO-92 package. It can be used in 1 W output amplifier of portable radios in class B push-pull operation.
There are some features as follows. (1) high total power dissipation; (2) high collector current; (3) complementary to HE9012; (4) excellent lnearity.
The following is the description about its absolute maximum ratings at TA is 25 . (1): storage temperature is from -55 to 150 and the maximum junction temperature is 150 ; (2): total power dissipation is 625 mW when TA is 25 ; (3): collector to base voltage(VCBO) is 40 V and collector to emitter voltage(VCEO) is 20 V,emitter to base voltage(VEBO) is 5 V; (4): IC collector current is 500 mA and IB base current is 100 mA; (5): the minimum BVCBO is 40 V when IC is 100 A and IE is 0; (6): the minimum BVCEO is 20 V when IC is 1 mA and IB is 0,the minimum BVEBO is 5 V when IE is 100 A and IC is 0; (7): the maximum IEBO is 100 nA when VEB is 3 V and IC is 0,the ICBO is 100 nA at VCE is 25 V and IE is 0; (8): the maximum VCE(sat) is 0.6 V at the condition of IC is 500 mA and IB is 50 mA; (9): the minimum fT is 100 MHz when VCE is 1 V,IC is 10 mA and f is 100 MHz.If you want to know more information about the HE9013-I,please download the datasheet at www.seekic.com.