HFA70NC60CSM, HFA70NH60, HFA70NH60R Selling Leads, Datasheet
MFG:IR Package Cooled:D61-8-SM D/C:00+
HFA70NC60CSM, HFA70NH60, HFA70NH60R Datasheet download
Part Number: HFA70NC60CSM
MFG: IR
Package Cooled: D61-8-SM
D/C: 00+
MFG:IR Package Cooled:D61-8-SM D/C:00+
HFA70NC60CSM, HFA70NH60, HFA70NH60R Datasheet download
MFG: IR
Package Cooled: D61-8-SM
D/C: 00+
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Datasheet: HFA70NC60CSM
File Size: 194087 KB
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Datasheet: HFA70NH60
File Size: 235294 KB
Manufacturer: IRF [International Rectifier]
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Datasheet: HFA70NH60R
File Size: 329977 KB
Manufacturer:
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HEXFREDTM diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
Parameter |
Max. |
Units | |
VR |
Cathode-to-Anode Voltage |
600 |
V |
IF @ TC = 25°C |
Continuous Forward Current |
56 |
A |
IF @ TC = 100°C |
Continuous Forward Current |
26 | |
IFSM |
Single Pulse Forward Current |
200 | |
EAS |
Non-Repetitive Avalanche Energy |
220 |
µJ |
PD @ TC = 25°C |
Maximum Power Dissipation |
150 |
W |
PD @ TC = 100°C |
Maximum Power Dissipation |
59 | |
TJ |
Operating Junction and |
-55 to +150 |
°C |
TSTG |
Storage Temperature Range | ||
Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) |
HEXFREDTM diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
Parameter |
Max. |
Units | |
VR |
Cathode-to-Anode Voltage |
600 |
V |
IF @ TC = 25°C |
Continuous Forward Current |
110 |
A |
IF @ TC = 100°C |
Continuous Forward Current |
54 | |
IFSM |
Single Pulse Forward Current |
400 | |
EAS |
Non-Repetitive Avalanche Energy |
220 |
µJ |
PD @ TC = 25°C |
Maximum Power Dissipation |
260 |
W |
PD @ TC = 100°C |
Maximum Power Dissipation |
104 | |
TJ |
Operating Junction and |
-55 to +150 |
°C |
TSTG |
Storage Temperature Range | ||
Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) |