HMC-C003, HMC-C004, HMC-C005 Selling Leads, Datasheet
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC-C003, HMC-C004, HMC-C005 Datasheet download

Part Number: HMC-C003
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC-C003, HMC-C004, HMC-C005 Datasheet download

MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
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PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
The HMC-C003 is a GaAs MMIC PHEMT Distributed Power Amplifier in a miniature, hermetic module with replaceable SMA connectors which operates between 2 and 20 GHz. The self-biased amplifier provides 15 dB of gain, +30 dBm output IP3 and up to +26 dBm of output power at 1 dB gain compression while requiring a single +12V supply. Gain flatness is excellent from 2 - 18 GHz making the HMC-C003 ideal for EW, ECM RADAR and test equipment applications. The wideband amplifier I/Os are internally matched to 50 Ohms and are internally DC blocked.
The HMC-C004 is a GaAs MMIC PHEMT Distributed Driver Amplifi er in a miniature, hermetic module with replaceable SMA connectors which operates between 10 MHz and 20 GHz. The self-biased amplifi er provides 15 dB of gain, 3 to 4 dB noise fi gure and +24 dBm of saturated output power while requiring a single +12V supply. Gain fl atness is excellent at ± 0.5 dB as well as ± 2 deg deviation from linear phase from 0.01 to 10 GHz making the HMC-C004 ideal for OC192 fi ber optic LN/MZ modulator driver applications. The wideband amplifi er I/Os are internally matched to 50 Ohms and are internally DC blocked.
| Bias Supply Voltage (Vs) | +11 Vdc to +13 Vdc |
| RF Input Power (RFin) | +23 dBm |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -55 to +85 |
The HMC-C005 is a low noise Divide-by-2 Static Divider utilizing InGaP GaAs HBT technology packaged in a miniature, hermetic module with replacable SMA connectors. This device operates from 0.5 to 18 GHz input frequency from a single +5.0V DC supply. The low additive SSB phase noise of -150 dBc/Hz at 100 kHz offset helps the user maintain excellent system noise performance.
| Supply Voltage (Vcc) | +5.5V |
| RF Input (Vcc = +5V) | +13 dBm |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -55 to +85 |
| ESD Sensitivity (HBM) | Class 1A |

