HMC213MS8TR, HMC214MS8, HMC215LP4 Selling Leads, Datasheet
MFG:HITTITE Package Cooled:MSOP-8 D/C:2008
HMC213MS8TR, HMC214MS8, HMC215LP4 Datasheet download

Part Number: HMC213MS8TR
MFG: HITTITE
Package Cooled: MSOP-8
D/C: 2008
MFG:HITTITE Package Cooled:MSOP-8 D/C:2008
HMC213MS8TR, HMC214MS8, HMC215LP4 Datasheet download

MFG: HITTITE
Package Cooled: MSOP-8
D/C: 2008
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Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: HMC214MS8
File Size: 280726 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
The HMC214MS8 & HMC214MS8E are general purpose high dynamic range passive MMIC mixers in plastic surface mount 8 lead Mini Small Outline Packages (MSOP) covering 2.4 to 4 GHz. Excellent input IP3 performance of +34 dBm for downconversion and +31 dBm for upconversion is provided for WiMax and other 3.5 GHz applications at an LO drive of +17 dBm. With a 1dB compression of +22 dBm, the RF port will accept a wide range of input signal levels. Conversion loss is 10 dB typical and LO isolations are maintained at 25 to 30 dB. This miniature single-ended monolithic GaAs FET mixer does not require any external components or bias. The DC to 1 GHz IF frequency response will satisfy many transmit and receive frequency plans confi gured for low side LO. The HMC214MS8 & HMC214MS8E input IP3 performance coupled with its high P1dB rivals traditional active FET mixers while offering a much smaller 14.8mm2 standard IC footprint and no DC bias.
| RF/IF Input | +27 dBm |
| LO Drive | +27 dBm |
| IF DC Current | ±40 mA |
| Channel Temperature | 150 °C |
| Continuous Pdiss (T=85 °C) (derate 3.69 mW/°C above 85 °C) |
240 mW |
| Thermal Resistance (RTH) (junction to lead) |
270 °C/W |
| Storage Temperature | -65 to +150 °C |
| Operating Temperature | -40 to +85 °C |

The HMC215LP4 & HMC215LP4E are high linearity, double-balanced converter ICs that operate from 1.7 to 4.0 GHz and deliver a +25 dBm input third order intercept point. The LO amplii er output and high dynamic range mixer input are ned so that an external LO i lter can be placed in series between them. The converter provides 32 dB of LO to RF isolation d is ideal for upconverter and downconverter applications. The IC operates from a single +5V supply consuming 56 mA of current and accepts a LO drive level of 2 to 6 dBm. The design requires no external baluns and supports IF frequencies between DC and 1 GHz. The HMC215LP4(E) is pin for pin compatible with the HMC552LP4(E), which operates from 1.6 o 3.0 GHz.
| RF / IF Input (Vcc= +5V) | +22 dBm |
| LO Drive (Vcc= +5V) | +10 dBm |
| BIAS | +7 Vdc |
| Junction Temperature | 150 |
| Continuous Pdiss (T = 85 (derate 5.21 mW/ above 85 |
0.339 W |
| Thermal Resistance (junction to ground paddle) |
192/W |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -40 to +85 |
