HMC232LP4, HMC233G8, HMC233MS8 Selling Leads, Datasheet
MFG:HITTITE Package Cooled:2008+ROHS D/C:2100
HMC232LP4, HMC233G8, HMC233MS8 Datasheet download
Part Number: HMC232LP4
MFG: HITTITE
Package Cooled: 2008+ROHS
D/C: 2100
HMC232LP4, HMC233G8, HMC233MS8
- Table of contents:
Info of HMC232LP4
Info of HMC233G8
Info of HMC233MS8
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About HMC232LP4
PDF/DataSheet Download
Datasheet: HMC232LP4
File Size: 233467 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
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About HMC233G8
PDF/DataSheet Download
Datasheet: HMC233G8
File Size: 196659 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
About HMC1001
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
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HMC232LP4 General Description
The HMC232LP4 is a broadband high isolation non-refl ective GaAs MESFET SPDT switch in a low cost leadless QFN surface mount plastic package. Covering DC to 12 GHz, the switch features >60 dB isolation up to 3 GHz and >42 dB isolation up to 12 GHz. Input P1dB compression is +27 dBm typical, while input IP3 is +50 dBm. The switch operates using complementary negative control voltage logic lines of -5/0V and requires no bias supply.
HMC232LP4 Maximum Ratings
| RF Input Power (Vctl= -5V) (0.5 - 12 GHz) |
+30 dBm (@ +50 °C) |
| Control Voltage Range (A & B) | +1.0V to -7.5 Vdc |
| Channel Temperature | 150°C |
| Thermal Resistance (RTH) (junction to lead) |
94 °C/W |
| Storage Temperature | -65 to +150 °C |
| Operating Temperature | -40 to +85 °C |
HMC232LP4 Features
Isolation: 60 dB @ 3 GHz
52 dB @ 6 GHz
+27 dBm Input P1dB
Insertion Loss: 1.5 dB Typical @ 6 GHz
Non-Refl ective Design
4 x 4 x 1 mm QFN SMT Package
52 dB @ 6 GHz
+27 dBm Input P1dB
Insertion Loss: 1.5 dB Typical @ 6 GHz
Non-Refl ective Design
4 x 4 x 1 mm QFN SMT Package
HMC232LP4 Typical Application
The HMC232LP4 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military Radios, Radar & ECM
• Test Instrumentation
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military Radios, Radar & ECM
• Test Instrumentation
HMC232LP4 Connection Diagram
HMC233G8 General Description
The HMC233G8 is a broadband high isolation non-refl ective GaAs MESFET SPDT switch in a hermetic surface mount package. Covering DC to 6.0 GHz, the switch features >44 dB isolation up to 2 GHz and >31 dB isolation up to 6.0 GHz. The switch operates using complementary negative control voltage logic lines of -5/0V and requires no bias supply.
HMC233G8 Maximum Ratings
| RF Input Power (Vctl= -5V) (0.5 - 6 GHz) |
+30 dBm (@ +85 °C) |
| Control Voltage Range (A & B) | +1.0V to -7.5 Vdc |
| Hot Switch Power Level | +27 dBm |
| Channel Temperature | 150 |
| Continuous Pdiss (T = 85 °C) (derate 4 mW/°C above 85 °C) |
0.25 W |
| Thermal Resistance (Insertion Loss Path) |
148 °C/W |
| Thermal Resistance (Terminated Path) |
260 °C/W |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -55 to +85 |
HMC233G8 Features
Isolation: 44 dB @ 2.0 GHz
31 dB @ 6.0 GHz
Insertion Loss: 1.5 dB Typical @ 4.0 GHz
Non-Refl ective Design
Hermetic Surface Mount Package
31 dB @ 6.0 GHz
Insertion Loss: 1.5 dB Typical @ 4.0 GHz
Non-Refl ective Design
Hermetic Surface Mount Package
HMC233G8 Typical Application
The HMC233G8 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military Radios, Radar & ECM
• Space Systems
• Test Instrumentation
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military Radios, Radar & ECM
• Space Systems
• Test Instrumentation
HMC233G8 Connection Diagram
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