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HMC258, HMC258LC3B, HMC259

Table of contents:
Info of HMC258
Info of HMC258LC3B
Info of HMC259

HMC258, HMC258LC3B, HMC259 Selling Leads, Datasheet

MFG:HITTITE Package Cooled:N/A D/C:2010+

HMC258, HMC258LC3B, HMC259 Datasheet download

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Part Number: HMC258

MFG: HITTITE

Package Cooled: N/A

D/C: 2010+

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HMC258 General Description

The HMC258 chip is a compact sub-harmonically pumped (x2) single ended MMIC mixer with an integrated LO amplifi er which can be used as an upconverter or downconverter. The chip utilizes a GaAs MESFET technology that results in a small overall chip area of 0.9mm2. The 2LO to RF isolation is excellent eliminating the need for additional fi ltering. The LO amplifi er is a single bias (+5V) two stage design with only 0dBm drive requirement. A less stringent oscillator design is made possible by the low LO drive and sub-harmonic nature of the chip. All data is with the chip in a 50 ohm test fi xture connected via 0.025mm (1 mil) diameter wire bonds of minimal length <0.31 mm (<12 mils).

HMC258 Maximum Ratings

RF / IF Input (Vdd = +5V)	+13 dBm
LO Drive (Vdd = +5V)	+13 dBm
Vdd	+10 Vdc
Storage Temperature	-65 to +150
Operating Temperature	-55 to +85 d

HMC258 Features

Integrated LO Amplifi er: 0dBm Drive
Sub-Harmonically Pumped (x2) LO
High 2LO/RF Isolation: 40 dB
Small Size: 0.8mm x 1.1mm

HMC258 Typical Application

The HMC258 is ideal for:
• Microwave Pt to Pt Radios
• VSAT
• SATCOM

HMC258LC3B General Description

The HMC258LC3B is a 14.5 - 19.5 GHz surface mount sub-harmonically pumped (x2) MMIC mixer with an integrated LO amplifi er in a SMT leadless ceramic package. At 45 dB the 2LO to RF isolation eliminates the need for additional fi ltering. The LO amplifi er is a single bias (+5V) two stage design with only 0 dBm driver requirement. The HMC258LC3B requires no external matching components, making it ideal for integrated subsystem applications. Utilizing the HMC258LC3B eliminates the need for wirebonding, thereby providing a consistent connection interface for the customer.

HMC258LC3B Maximum Ratings

RF / IF Input (Vdd = +5V)	+13 dBm
LO Drive (Vdd = +5V)	+13 dBm
Vdd	+5.5V
Continous Pdiss (Ta = 85 ) (derate 2.1 mW/°C above 85 )	486 mW
Channel Temperature	150
Thermal Resistance (channel to ground paddle)	133.6 /W
Storage Temperature	-65 to +150
Operating Temperature	-40 to +85

HMC258LC3B Features

Integrated LO Amplifi er: 0 dBm Input
Sub-Harmonically Pumped (x2) LO
High 2LO/RF Isolation: >45 dB
Wide IF Bandwidth: DC - 3.5 GHz
No External Matching Required
RoHS Compliant 3x3mm Ceramic SMT Package

HMC258LC3B Typical Application

The HMC258LC3B is ideal for:
• Point to Point Radios
• VSAT and SATCOM
• Test & Measurement Equipment
• Military & Space

HMC259 General Description

The HMC259 chip is a broadband sub-harmonically pumped (x2) balanced MMIC passive mixer which can be used as an upconverter or downconverter. The chip utilizes a GaAs MESFET process resulting in a small overall chip area of 1.9mm2. This chip has a very wide IF bandwidth of DC-13 GHz. The 2LO to RF isolation is excellent eliminating the need for additional filtering . This mixer chip is designed to be used in 38GHz point to point radios, Local Multi-Point Distribution Systems (LMDS), and SATCOM applications. All data is with the chip in a 50 ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length <0.31 mm (<12 mils). This device is a much smaller and more reliable replacement to hybrid diode mixer designs.

HMC259 Maximum Ratings

RF / IF Input	+13 dBm
LO Drive	+23 dBm
Storage Temperature	-65 to +150 deg C
Operating Temperature	-55 to +85 deg C

HMC259 Features

SUB-HARMONICALLY PUMPED (x2) LO
HIGH 2LO/RF ISOLATION: > 35dB
SMALL SIZE: 1.24mm x 1.55mm
IDEAL FOR 38 GHz RADIOS, E1 & T1

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