HMC279MS8G, HMC280MS8G, HMC283 Selling Leads, Datasheet
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC279MS8G, HMC280MS8G, HMC283 Datasheet download

Part Number: HMC279MS8G
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC279MS8G, HMC280MS8G, HMC283 Datasheet download

MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
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Datasheet: HMC279MS8G
File Size: 234988 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC280MS8G
File Size: 222100 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC283
File Size: 291194 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
The HMC279MS8G is a +3V GaAs MMIC driver amplifi er covering the 2.5 - 4.2 GHz frequency range. The device is packaged in a low cost, surface mount MSOP plastic package with an exposed base paddle for improved RF ground. The amplifi er provides greater than 36dB gain and +14 dBm P1dB while operating from a single +3V supply at only 60mA. No external components are required and the amplifi er occupies less than 0.023 sq. in. (14.6 sq. mm). All data is taken with the amplifi er assembled into a 50 ohm test fi xture with the exposed ground paddle connected to RF ground.
| Drain Bias Voltage (Vdd) | +8.0 Vdc |
| RF Input Power (Vdd = + 3.0 Vdc) | -10 dBm |
| Channel Temperature | 150 |
| Continuous Pdiss (T = 85 °C) (derate 20 mW/°C above 85 °C) |
1.3 W |
| Thermal Resistance (channel to ground paddle) |
50 /W |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -40 to +85 |

The HMC280MS8G is a +3.6V GaAs MMIC power amplifi er covering 5 to 6 GHz. The device is packaged in a low cost, surface mount 8 lead MSOP plastic package with an exposed base paddle for improved RF ground and thermal dissipation. The amplifi er provides 18 dB of gain and 24 dBm Psat while operating from a single positive supply. External component requirements are minimal with the amplifi er occupying less than 0.023 sq. in. (14.6 sq. mm). All data is taken with the amplifi er assembled into a 50 ohm test fi xture with the exposed base paddle connected to RF ground. For transmit / receive applications use with either the HMC223MS8 or HMC224MS8 SPDT switches.
| Drain Bias Voltage (Vdd1, Vdd2) | +8.0 Vdc |
| RF Input Power (RFin)(Vdd = +5.0 Vdc) | +20 dBm |
| Channel Temperature | 150 °C |
| Continuous Pdiss (T = 85 °C) (derate 41 mW/°C above 85 °C) |
2.67 W |
| Thermal Resistance (channel to lead) |
24.3 °C/W |
| Storage Temperature | -65 to +150 °C |
| Operating Temperature | -55 to +85 °C |

The HMC283 chip is a four stage GaAs MMIC Medium Power Amplifi er (MPA) which covers the frequency range of 17 to 40 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (1.62 mm2) size. The chip utilizes a GaAs PHEMT process offering 20 dB gain and +21 dBm output power from a bias supply of +3.5V @ 300mA. The HMC283 may be used as a frequency doubler. A B.I.T. (Built-In-Test) pad (Vdet) allows monitoring microwave output power. All data is with the chip in a 50 ohm test fi xture connected via 0.076mm x 0.0127mm (3mil x 0.5mil) ribbon bonds of minimal length 0.31mm (<12mils).
| Drain Bias Voltage (Vdd1, Vdd2, Vdd3, Vdd4) | +5.0 Vdc |
| Drain Bias Current (Idd) | 400 mA |
| Gate Bias Voltage (Vgg1, Vgg2, Vgg3, Vgg4) | -2 to +0.4Vdc |
| Gate Bias Current (Igg) | 4 mA |
| RF Input Power (RFin)(Vdd = +5.0 Vdc) | +10 dBm |
| Channel Temperature | 175 °C |
| Continuous Pdiss (T = 85 °C) (derate 13.04 mW/°C above 85 °C) |
1.174 W |
| Thermal Resistance (channel to lead) |
76.7 °C/W |
| Storage Temperature | -65 to +150 °C |
| Operating Temperature | -55 to +85 °C |
