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HMC283LM1, HMC284, HMC284MS8

HMC283LM1, HMC284, HMC284MS8 Selling Leads, Datasheet

MFG:HITTITE  Package Cooled:N/A  D/C:2010+

HMC283LM1, HMC284, HMC284MS8 Picture

HMC283LM1, HMC284, HMC284MS8 Datasheet download

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Part Number: HMC283LM1

 

MFG: HITTITE

Package Cooled: N/A

D/C: 2010+

 

 

 
 
 
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  • HMC283LM1

  • Vendor: Hittite D/C: 08+& Qty: 20 Note: MEDIUM POWER GAAS MMIC A  Adddate: 2026-07-12
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About HMC283LM1

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Datasheet: HMC283LM1

File Size: 376499 KB

Manufacturer: HITTITE [Hittite Microwave Corporation]

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  • HMC284MS8

  • Vendor: Hittite Pack: SOP D/C: 96+& Qty: 10000  Adddate: 2026-07-12
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  • Kinergy Tech (HK)Co.,Ltd   Hong
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  • HMC284MS8G

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About HMC284MS8G

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Datasheet: HMC284MS8G

File Size: 213524 KB

Manufacturer: HITTITE [Hittite Microwave Corporation]

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  • HMC284MS8

  • Vendor: Hittite Pack: SOP D/C: 96+& Qty: 10000  Adddate: 2026-07-12
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  • Kinergy Tech (HK)Co.,Ltd   Hong
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  • HMC284MS8G

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About HMC284MS8G

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Datasheet: HMC284MS8G

File Size: 213524 KB

Manufacturer: HITTITE [Hittite Microwave Corporation]

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HMC283LM1 General Description

The HMC283LM1 is a Medium Power Amplifi er (MPA) in a SMT leadless chip carrier package covering 17 to 40 GHz. The LM1 is a true surface mount broadband millimeterwave package offering low loss & excellent I/O match preserving MMIC chip performance. Utilizing a GaAs PHEMT process, the device offers 20 dB gain and +21 dBm ouput power from a bias supply of +3.5V @ 300mA. As an alternative to chip-and-wire hybrid assemblies the HMC283LM1 eliminates the need for wirebonding, thereby providing a consistent connection interface for the customer. The amplifi er may be used as a frequency doubler. A built-in-test pad (Vdet) allows monitoring of microwave output power. All data is with the non-hermetic, epoxy sealed LM1 packaged MPA device mounted in a 50 ohm test fi xture.

HMC283LM1 Maximum Ratings

Drain Bias Voltage (Vdd) +5.0 Vdc
Drain Bias Current (Idd) 400 mA
Gate Bias Voltage (Vgg1, Vgg2) -2.0 to +0.4 Vdc
Gate Bias Current (Igg) 4.0 mA
RF Input Power (RFin)(Vdd = +3.5 Vdc) +10 dBm
Channel Temperature 175 °C
Continuous Pdiss (T = 85 °C)
(derate 16 mW/°C above 85 °C)
1.44 W
Thermal Resistance
(channel to ground paddle)
62.5 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C

HMC283LM1 Features

SMT mmWave Package
Psat Output Power: +21 dBm
High Gain: 21 dB
No External Matching Required

HMC283LM1 Typical Application

The HMC283LM1 is ideal for:
• Millimeterwave Point-to-Point Radios
• LMDS
• SATCOM

HMC283LM1 Connection Diagram

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