HMC311ST89, HMC313, HMC314 Selling Leads, Datasheet
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC311ST89, HMC313, HMC314 Datasheet download

Part Number: HMC311ST89
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC311ST89, HMC313, HMC314 Datasheet download

MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
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PDF/DataSheet Download
Datasheet: HMC311ST89
File Size: 254938 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC313
File Size: 210798 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC314
File Size: 251630 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
The HMC311ST89 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 6 GHz amplifi er. Packaged in an industry standard SOT89, the amplifi er can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +16.5 dBm output power. The HMC311ST89 offers 16 dB of gain and an output IP3 of +31.5 dBm while requiring only 54 mA from a +5V supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components
| Collector Bias Voltage (Vcc) | +7.0 Vdc |
| RF Input Power (RFin)(Vs = +5.0 Vdc) | +10 dBm |
| Junction Temperature | 150 °C |
| Continuous Pdiss (T = 85 °C) (derate 16 mW/°C above 85 °C) |
0.34 W |
| Thermal Resistance (junction to ground paddle) |
191 °C/W |
| Storage Temperature | -65 to +150 °C |
| Operating Temperature | -40 to +85 °C |
| Collector Bias Voltage (Vcc) | +5.5 Vdc |
| RF Input Power (RFin)(Vcc = +5.0 Vdc) | +20 dBm |
| Junction Temperature | 150 |
| Continuous Pdiss (T = 85 ) (derate 3.99 mW/ above 85 ) |
0.259 W |
| Thermal Resistance (junction to lead) |
251 /W |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -40 to +85 |

| Collector Bias Voltage (Vcc) | +5.5 Vdc |
| Control Voltage Range (Vpd) | -0.2 to 3.5 Vdc |
| RF Input Power (RFin)(Vs = +5.0 Vdc) | +20 dBm |
| Junction Temperature | 150 |
| Continuous Pdiss (T = 65) (derate 6.57 mW/ above 65) |
0.558 W |
| Thermal Resistance (junction to paddle) |
152/W |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -40 to +65 |

