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HMC327MS8G, HMC329LM3, HMC332

Table of contents:
Info of HMC327MS8G
Info of HMC329LM3
Info of HMC332

HMC327MS8G, HMC329LM3, HMC332 Selling Leads, Datasheet

MFG:HITTITE Package Cooled:2004+ D/C:8300

HMC327MS8G, HMC329LM3, HMC332 Datasheet download

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Part Number: HMC327MS8G

MFG: HITTITE

Package Cooled: 2004+

D/C: 8300

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HMC327MS8G General Description

The HMC327MS8G is a high effi ciency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifi er which operates between 3.0 and 4.0 GHz. The amplifi er is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifi er provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5.0V supply voltage. Power down capability is available to conserve current consumption when the amplifi er is not in use.

HMC327MS8G Maximum Ratings

Collector Bias Voltage (Vcc)	+5.5 Vdc
Control Voltage (Vpd)	+5.5 Vdc
RF Input Power (RFin)(Vs = Vctl = +5.0 Vdc)	+20 dBm
Junction Temperature	150 °C
Continuous Pdiss (T = 85 °C) (derate 29 mW/°C above 85 °C)	1.88 W
Thermal Resistance (junction to ground paddle)	34 °C/W
Storage Temperature	-65 to +150 °C
Operating Temperature	-40 to +85 °C

HMC327MS8G Features

Gain: 21 dB
Saturated Power: +30 dBm
45% PAE
Supply Voltage: +5.0 V
Power Down Capability
Low External Part Count

HMC327MS8G Typical Application

This amplifi er is ideal for use as a power
amplifi er for 3.3 - 3.6 GHz applications:
• Wireless Local Loop

HMC327MS8G Connection Diagram

HMC329LM3 General Description

The HMC329LM3 is a 26 - 40 GHz surface mount, passive, double-balanced MMIC mixer in a SMT leadless chip carrier package. The mixer can be used as a downconverter or upconverter. Excellent isolations are provided by on-chip baluns. The chip requires no external components and no DC bias. All data is with the non-hermetic, epoxy sealed LM3 package mounted in a 50 Ohm test fi xture. Utilizing the HMC329LM3 eliminates the need for wirebonding, thereby providing a consistent connection interface for the customer.

HMC329LM3 Maximum Ratings

RF / IF Input	+13 dBm
LO Drive	+27 dBm
IF DC Current	±2 mA
Storage Temperature	-65 to +150
Operating Temperature	-40 to +85

HMC329LM3 Features

Passive: No DC Bias Required
Input IP3: +19 dBm
LO/RF Isolation: 35 dB
Leadless SMT Package, 25 mm²

HMC329LM3 Typical Application

The HMC329LM3 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• SATCOM
• RADAR

HMC332 General Description

The HMC332 is a single balanced mixer IC with an integrated LO amplifi er. This converter IC can operate as an upconverter or downconverter between 2.0 GHz and 2.8 GHz. With the integrated LO amplifi er, the mixer requires an LO drive level of only 0 dBm, and requires only 6 mA from a single positive +3V rail. The mixer has 8 dB of conversion loss, an input P1dB of 0 dBm, and an input third order intercept point of +10 dBm.

HMC332 Maximum Ratings

RF / IF Input (Vdd = +3V)		+13 dBm
LO Drive (Vdd = +3V)		+13 dBm
Vdd		5.5 V
Continuous Pdiss (T = 85°C) (Derate 2.64 mW/°C above 85 C)		238 mW
IF DC Current		±3 mA
Storage Temperature		-65 to +150 °C
Operating Temperature		-40 to +85 °C

HMC332 Features

Integrated LO Amplifi er w/ Pdiss: < 20 mW
Conversion Loss / Noise Figure: 8.0 dB
Low LO Drive Level: 0 dBm
Input IP3: +10 dBm
Single Positive Supply: 3V to 5V

HMC332 Typical Application

The HMC332 is ideal for:
• MMDS
• PCMCIA
• WirelessLAN
• WCDMA micro-BTS

HMC332 Connection Diagram

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