HMC334LP4, HMC335G16, HMC336MS8 Selling Leads, Datasheet
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC334LP4, HMC335G16, HMC336MS8 Datasheet download

Part Number: HMC334LP4
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC334LP4, HMC335G16, HMC336MS8 Datasheet download

MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC335G16
File Size: 244615 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC336MS8G
File Size: 180670 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
The HMC334LP4 & HMC334LP4E are low noise, wideband downconverter RFICs which are ideal for Cellular/3G and WiMAX/4G applications from 0.8 to 2.7 GHz. The LO input accepts drive levels from -6 to +6 dBm while the RFIC provides 48 dB of LO to RF isolation, and 0 dB conversion loss. The HMC334LP4(E) will support an IF output bandwidth of up to 600 MHz and consumes only 173mA from a +5.0V supply. This wideband active mixer also provides excellent performance in the presence of high level "Blocker" signals, making it ideal for receiver applications in demanding environments.
|
RF Input (VSLO = VSIF= +5V) |
+21 dBm |
|
LO Drive (VSLO = VSIF= +5V) |
+12 dBm |
|
VccLO, VccIF |
+6 Vdc |
|
Channel Temperature |
150 |
|
Continuous Pdiss (T = 85) (derate 27.8 mW/ above 85) |
1.8 W |
|
Thermal Resistance (channel to ground paddle) |
36 /W |
|
Storage Temperature |
-65 to 150 |
|
Operating Temperature |
-40 to 85 |
| Control Voltage (V1 - V5) | Vee +0.5 Vdc |
| Bias Voltage (Vee) | -7.0 Vdc |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -40 to +85 |
| RF Input Power(0.5 - 3 GHz) | +26 dBm |

