MFG:Hittite Package Cooled:MSOP-8 D/C:07+
HMC336MS8GE, HMC336MSMS8G (HITTITE), HMC337 Datasheet download
MFG: Hittite
Package Cooled: MSOP-8
D/C: 07+
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PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC337
File Size: 293287 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
The HMC336MS8G & HMC336MS8GE are broadband non-refl ective GaAs MESFET SPDT switches in low cost 8 lead MSOP8G surface mount packages with an exposed ground paddle. Covering DC to 6.0 GHz, this switch offers high isolation and low insertion loss. The switch operates using a positive control voltage of 0/+5 Volts, and requires a fi xed bias of +5V. This switch is suitable for usage in 50-Ohm or 75-Ohm systems.
| Bias Voltage Range (Vdd) | +7.0 Vdc |
| Control Voltage Range (A & B) |
-0.5V to Vdd +1.0 Vdc |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -40 to +85 |
| Maximum Input Power | +28 dBm |
| ESD Sensitivity (HBM) | Class 1A |
The HMC258 chip is a compact sub-harmonically pumped (x2) single ended MMIC mixer with an integrated LO amplifi er which can be used as an upconverter or downconverter. The chip utilizes a GaAs MESFET technology that results in a small overall chip area of 0.9mm2. The 2LO to RF isolation is excellent eliminating the need for additional fi ltering. The LO amplifi er is a single bias (+5V) two stage design with only 0dBm drive requirement. A less stringent oscillator design is made possible by the low LO drive and sub-harmonic nature of the chip. All data is with the chip in a 50 ohm test fi xture connected via 0.025mm (1 mil) diameter wire bonds of minimal length <0.31 mm (<12 mils).
| RF / IF Input (Vdd = +5V) | +13 dBm |
| LO Drive (Vdd = +5V) | +13 dBm |
| Vdd | +10 Vdc |
| Continuous Pdiss (Ta = 85 °C) (derate 2.64 mW/°C above 85 °C) |
238 mW |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -55 to +85 d |
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