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HMC341, HMC341LC3B, HMC342

Table of contents:
Info of HMC341
Info of HMC341LC3B
Info of HMC342

HMC341, HMC341LC3B, HMC342 Selling Leads, Datasheet

MFG:HITTITE Package Cooled:N/A D/C:2010+

HMC341, HMC341LC3B, HMC342 Datasheet download

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Part Number: HMC341

MFG: HITTITE

Package Cooled: N/A

D/C: 2010+

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HMC341 General Description

The HMC341 chip is a GaAs MMIC Low Noise Amplifi er (LNA) which covers the frequency range of 24 to 30 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (1.51 mm2) size. The chip utilizes a GaAs PHEMT process offering 13 dB gain from a single bias supply of + 3V @ 30 mA with a noise fi gure of 2.5 dB. All data is with the chip in a 50 ohm test fi xture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (<12 mils).

HMC341 Maximum Ratings

Drain Bias Voltage (Vdd)	+5.5 Vdc
RF Input Power (RFin)(Vdd = +3.0 Vdc)	+5 dBm
Channel Temperature	175 °C
Continuous Pdiss (T = 85 °C) (derate 3.44 mW/°C above 85 °C)	0.310 W
Thermal Resistance (channel to lead)	290 °C/W
Storage Temperature	-65 to +150 °C
Operating Temperature	-40 to +85 °C

HMC341 Features

Excellent Noise Figure: 2.5 dB
Gain: 13 dB
Single Supply : +3V @ 30 mA
Small Size: 1.06 mm x 1.42 mm

HMC341 Typical Application

The HMC341 is ideal for:
• Millimeterwave Point-to-Point Radios
• LMDS
• VSAT & SATCOM

HMC341LC3B General Description

The HMC341LC3B is a GaAs PHEMT MMIC Low Noise Amplifi er housed in a leadless RoHS compliant SMT package. Operating from 21 to 29 GHz, the amplifi er provides 13 dB of gain and a noise fi gure of 2.5 dB from a single +3.0 V supply. The RF I/Os are DC blocked and matched to 50 Ohms requiring no external components. The HMC341LC3B eliminates the need for wire bonding, allowing the use of surface mount manufacturing techniques.

HMC341LC3B Maximum Ratings

Drain Bias Voltage (Vdd)

RF Input Power (RFin)(Vdd = +3.0 Vdc)

Channel Temperature
Continuous Pdiss (T= 85)
(derate 5.43 mW/above 85)

Thermal Resistance
(channel to ground paddle)

Storage Temperature

Operating Temperature

+5.5 Vdc

+5 dBm

175

0.489 W

184 °C/W

-65 to +150

-40 to +85

HMC341LC3B Features

2.5 dB Noise Figure
13 dB Gain
+3.0 V @ 35 mA Supply
50 Ohm Matched Input/Output
RoHS Compliant 3x3 mm SMT Package

HMC341LC3B Typical Application

The HMC341LC3B is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment & Sensors
• Military End-Use

HMC341LC3B Connection Diagram

HMC342 General Description

The HMC342 chip is a GaAs MMIC Low Noise Amplifi er (LNA) which covers the frequency range of 13 to 25 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (2.14 mm2) size. The chip utilizes a GaAs PHEMT process offering 20 dB gain from a single bias supply of + 3.0V @ 36 mA with a noise fi gure of 3.5 dB. All data is with the chip in a 50 ohm test fi xture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (<12 mils).

HMC342 Maximum Ratings

Drain Bias Voltage (Vdd)	+5.5 Vdc
RF Input Power (RFin)(Vdd = +3.0 Vdc))	0 dBm
Channel Temperature	175 °C
Continuous Pdiss (T = 85 °C) (derate 3.62 mW/°C above 85 °C)	0.326 W
Thermal Resistance (channel to die bottom)	276 °C/W
Storage Temperature	-65 to +150 °C
Operating Temperature	-55 to +85 °C

HMC342 Features

Noise Figure : 3.5 dB
Gain: 20 dB
Single Supply : +3V @ 36 mA
Small Size: 1.06 mm x 2.02 mm

HMC342 Typical Application

The HMC342 is ideal for:
• Microwave Point-to-Point Radios
• Millimeterwave Point-to-Point Radios
• VSAT & SATCOM

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