HMC349LP4C, HMC349LP4CETR, HMC349MS8G Selling Leads, Datasheet
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC349LP4C, HMC349LP4CETR, HMC349MS8G Datasheet download
Part Number: HMC349LP4C
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
HMC349LP4C, HMC349LP4CETR, HMC349MS8G
- Table of contents:
Info of HMC349LP4C
Info of HMC349LP4CETR
Info of HMC349MS8G
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About HMC349LP4C
PDF/DataSheet Download
Datasheet: HMC349LP4C
File Size: 219047 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
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About HMC1001
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Datasheet: HMC1001
File Size: 236544 KB
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About HMC349MS8G
PDF/DataSheet Download
Datasheet: HMC349MS8G
File Size: 215565 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
HMC349LP4C General Description
The HMC349LP4C is a high isolation nonrefl ective DC to 4 GHz GaAs MESFET SPDT switch in a low cost leadless surface mount package. The switch is ideal for cellular/PCS/3G basestation applications yielding 60 to 65 dB isolation, low 0.9 dB insertion loss and +52 dBm input IP3. Power handling is excellent up through the 3.5 GHz WLL band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows a single positive voltage control of 0/+5 Volts at very low DC currents. An enable input (EN) set to logic high will put the switch in an "all off" state.
HMC349LP4C Maximum Ratings
| RF Input Power (Vctl = 0V/+5V) (0.25 - 4 GHz) |
+30 dBm (T = +85 ) |
| Supply Voltage Range (Vdd) | +7 Vdc |
| Control Voltage Range (Vctl) | -1V to Vdd +1V |
| Hot Switch Power Level (Vdd = +5V) |
+30 dBm |
| Channel Temperature | 150 |
| Continuous Pdiss (T = 85 ) (derate 12 mW/ above 85 ) |
0.75 W |
| Thermal Resistance | 87 /W |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -40 to +85 |
HMC349LP4C Features
·High Isolation: 67 dB @ 1 GHz
62 dB @ 2 GHz
·Single Positive Control: 0/+5V
·+52 dBm Input IP3
·Non-Refl ective Design
·All Off State
·16 mm2 Leadless QFN SMT Package
62 dB @ 2 GHz
·Single Positive Control: 0/+5V
·+52 dBm Input IP3
·Non-Refl ective Design
·All Off State
·16 mm2 Leadless QFN SMT Package
HMC349LP4C Typical Application
The HMC349LP4C is ideal for:
• Basestation Infrastructure
• MMDS & 3.5 GHz WLL
• CATV/CMTS
• Test Instrumentation
• Basestation Infrastructure
• MMDS & 3.5 GHz WLL
• CATV/CMTS
• Test Instrumentation
HMC349LP4C Connection Diagram
HMC349MS8G General Description
The HMC349MS8G is a high isolation nonrefl ective DC to 4 GHz GaAs MESFET SPDT switch in a low cost 8 lead MSOP8G surface mount package with an exposed ground paddle. The switch is ideal for cellular/PCS/3G basestation applications yielding 50 to 60 dB isolation, low 0.8 dB insertion loss and +52 dBm input IP3. Power handling is excellent up through the 3.5 GHz WLL band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows a single positive voltage control of 0/+5 Volts at very low DC currents. An enable input (EN) set to logic high will put the switch in an "all off" state.
HMC349MS8G Maximum Ratings
| RF Input Power (Vctl = 0V/+5V) (0.25 - 4 GHz) |
+30 dBm (T = +85 ) |
| Supply Voltage Range (Vdd) | +7 Vdc |
| Control Voltage Range (Vctl) | -1V to Vdd +1V |
| Hot Switch Power Level (Vdd = +5V) |
+30 dBm |
| Channel Temperature | 150 |
| Continuous Pdiss (T = 85 ) (derate 12 mW/ above 85 ) |
0.75 W |
| Thermal Resistance | 87 /W |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -40 to +85 |
HMC349MS8G Features
·High Isolation: 70 dB @ 1 GHz
57 dB @ 2 GHz
·Single Positive Control: 0/+5V
·+52 dBm Input IP3
·Non-Refl ective Design
·All Off State
·Ultra Small MS8G SMT Package: 14.8 mm2
57 dB @ 2 GHz
·Single Positive Control: 0/+5V
·+52 dBm Input IP3
·Non-Refl ective Design
·All Off State
·Ultra Small MS8G SMT Package: 14.8 mm2
HMC349MS8G Typical Application
The HMC349MS8G is ideal for:
• Basestation Infrastructure
• MMDS & 3.5 GHz WLL
• CATV/CMTS
• Test Instrumentation
• Basestation Infrastructure
• MMDS & 3.5 GHz WLL
• CATV/CMTS
• Test Instrumentation
HMC349MS8G Connection Diagram
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