HMC351MS8, HMC353MS8, HMC356LP3E Selling Leads, Datasheet
MFG:HITTITE Package Cooled:SMD/DIP D/C:N/A
HMC351MS8, HMC353MS8, HMC356LP3E Datasheet download
Part Number: HMC351MS8
MFG: HITTITE
Package Cooled: SMD/DIP
D/C: N/A
HMC351MS8, HMC353MS8, HMC356LP3E
- Table of contents:
Info of HMC351MS8
Info of HMC353MS8
Info of HMC356LP3E
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About HMC1001
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
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About HMC1001
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
About HMC1001
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
HMC353MS8 General Description
The HMC353MS8 is a single balanced mixer IC with an integrated LO ampli? er. This converter can operate as an upconverter and downcon-verter between 0.8 GHz and 1.2 GHz. With the integrated LO ampli? er, the mixer requires an LO drive level of only 0 dBm, and requires only 6 mA from a single positive +3V rail. The mixer has 8 dB of conversion loss, an input P1dB of +7 dBm and an input third order intercept point of +16 dBm at 1 GHz.
HMC353MS8 Maximum Ratings
| RF/IF Input(Vdd=+3V) LO Drive(Vdd=+3V) Vdd IF DC Current Storage Temperature Operating Temperature |
+13 dBm + 13 dBm 5.5V ±4mA -65 to +150 deg C -40 to +85 deg C |
HMC353MS8 Features
·Integrated LO Amplifier w/ Pdiss: < 20 mW
·Conversion Loss / Noise Figure: 8.0 dB
·Low LO Drive Level: 0 dBm
·Input IP3: >+16 dBm
·Single Positive Supply: 3V to 5V
·Conversion Loss / Noise Figure: 8.0 dB
·Low LO Drive Level: 0 dBm
·Input IP3: >+16 dBm
·Single Positive Supply: 3V to 5V
HMC353MS8 Typical Application
· BTS Infrastructure
HMC353MS8 Connection Diagram
HMC356LP3E General Description
The HMC356LP3 & HMC356LP3E are high dynamic range GaAs PHEMT MMIC Low Noise Amplifi ers is ideal for GSM & CDMA cellular basestation and Mobile Radio front-end receivers operating between 350 and 550 MHz. This LNA has been optimized to provide 1.0 dB noise fi gure, 17 dB gain and +38 dBm output IP3 from a single supply of +5.0V @ 104 mA. Input and output return losses are 15 dB typical, with the LNA requiring only four external components to optimize the RF input match, RF ground and DC bias. The HMC356LP3 & HMC356LP3E share the same package and pinout with the HMC372LP3 high IP3 LNA. A low cost, leadless 3x3 mm (LP3) SMT QFN package houses the low noise amplifi er.
HMC356LP3E Maximum Ratings
| Drain Bias Voltage (Vdd) | +8.0 Vdc |
| RF Input Power (RFin)(Vdd = +5.0 Vdc) | +15 dBm |
| Channel Temperature | 150 |
| Continuous Pdiss (T = 85) (derate 14 mW/ above 85) |
0.910 W |
| Thermal Resistance (channel to ground paddle) |
71.4/W |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -40 to +85 |
HMC356LP3E Features
Noise Figure: 1.0 dB
+38 dBm Output IP3
Gain: 17 dB
Very Stable Gain vs. Supply & Temperature
Single Supply: +5.0V @ 104 mA
50 Ohm Matched Output
+38 dBm Output IP3
Gain: 17 dB
Very Stable Gain vs. Supply & Temperature
Single Supply: +5.0V @ 104 mA
50 Ohm Matched Output
HMC356LP3E Typical Application
The HMC356LP3 / HMC356LP3E is ideal for
basestation receivers:
• GSM 450 & GSM 480
• CDMA 450
• Private Land Mobile Radio
basestation receivers:
• GSM 450 & GSM 480
• CDMA 450
• Private Land Mobile Radio
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