HMC380QS16GE, HMC380QS16GETR, HMC382LP3 Selling Leads, Datasheet
MFG:HITTITE Package Cooled:QSOP16 D/C:2007
HMC380QS16GE, HMC380QS16GETR, HMC382LP3 Datasheet download

Part Number: HMC380QS16GE
MFG: HITTITE
Package Cooled: QSOP16
D/C: 2007
MFG:HITTITE Package Cooled:QSOP16 D/C:2007
HMC380QS16GE, HMC380QS16GETR, HMC382LP3 Datasheet download

MFG: HITTITE
Package Cooled: QSOP16
D/C: 2007
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PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
The HMC382LP3 & HMC382LP3E high dynamic range GaAs PHEMT MMIC Low Noise Amplifi ers are ideal for GSM & CDMA cellular basestation front-end receivers operating between 1.7 and 2.2 GHz. This LNA has been optimized to provide 1.0 dB noise fi gure, 17 dB gain and +30 dBm output IP3 from a single supply of +5.0V. Input and output return losses are 13 dB typical and the LNA requires no external matching components. The HMC382LP3 & HMC382LP3E share the same package and pinout with the HMC376LP3 0.7 - 1.0 GHz LNA. The HMC382LP3 & HMC382LP3E feature an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application.
| Drain Bias Voltage (Vdd1, Vdd2) | +8.0 Vdc |
| RF Input Power (RFin)(Vcc = +5.0 Vdc) | +10 dBm |
| Junction Temperature | 150 |
| Continuous Pdiss (T = 85) (derate 6.94 mW/ above 85) |
0.451 W |
| Thermal Resistance(junction to lead) | 144/W |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -40 to +85 |

