HMC405, HMC406MS8, HMC407 Selling Leads, Datasheet
MFG:HITTITE Package Cooled:new D/C:2007
HMC405, HMC406MS8, HMC407 Datasheet download

Part Number: HMC405
MFG: HITTITE
Package Cooled: new
D/C: 2007
MFG:HITTITE Package Cooled:new D/C:2007
HMC405, HMC406MS8, HMC407 Datasheet download

MFG: HITTITE
Package Cooled: new
D/C: 2007
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PDF/DataSheet Download
Datasheet: HMC405
File Size: 218391 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC406MS8G
File Size: 265852 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC407MS8G
File Size: 285983 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
The HMC405 die is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC DC to 10 GHz amplifier. This amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +17 dBm output power. The HMC405 offers 16 dB of gain and an output IP3 of +32 dBm while requiring only 50 mA from a +5V supply.
The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. The HMC405 can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (0.22mm²) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.5mm (20 mils).
| Collector Bias Voltage (Vcc) | +7.0 Vdc |
| RF Input Power (RFin)(Vs = +5.0 Vdc) | +10 dBm |
| Junction Temperature | 150 °C |
| Continuous Pdiss (T = 85 °C) (derate 16 mW/°C above 85 °C) |
0.339 W |
| Thermal Resistance (junction to ground paddle) |
192 °C/W |
| Storage Temperature | -65 to +150 °C |
| Operating Temperature | -55 to +85 °C |
