HMC4074LP6CE, HMC407MS8GE, HMC407QS16G Selling Leads, Datasheet
MFG:HITTITE Package Cooled:19 D/C:08+
HMC4074LP6CE, HMC407MS8GE, HMC407QS16G Datasheet download
Part Number: HMC4074LP6CE
MFG: HITTITE
Package Cooled: 19
D/C: 08+
MFG:HITTITE Package Cooled:19 D/C:08+
HMC4074LP6CE, HMC407MS8GE, HMC407QS16G Datasheet download
MFG: HITTITE
Package Cooled: 19
D/C: 08+
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Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
The HMC407MS8G & HMC407MS8GE are high effi - ciency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifi ers which operate between 5 and 7 GHz. The amplifi er requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifi er is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifi er provides 15 dB of gain, +29 dBm of saturated power at 28% PAE from a +5.0V supply voltage. Power down capability is available to conserve current consumption when the amplifi er is not in use.
Collector Bias Voltage (Vcc1, Vcc2) | +5.5 Vdc |
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc) | +5.5 Vdc |
Junction Temperature | +20 dBm |
Continuous Pdiss (T = 85 ) (derate 31 mW/ above 85 ) |
150 |
Thermal Resistance (junction to lead) |
2W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 |