HMC498, HMC499, HMC500LP4E Selling Leads, Datasheet
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC498, HMC499, HMC500LP4E Datasheet download
Part Number: HMC498
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
HMC498, HMC499, HMC500LP4E
- Table of contents:
Info of HMC498
Info of HMC499
Info of HMC500LP4E
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About HMC1001
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Datasheet: HMC1001
File Size: 236544 KB
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About HMC499LC4
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Datasheet: HMC499LC4
File Size: 357011 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
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About HMC1001
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
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HMC498 General Description
The HMC498 is a high dynamic range GaAs PHEMT MMIC Power Amplifi er which operates between 17 and 24 GHz.
The HMC498 provides 24 dB of gain, +27 dBm of saturated power and 25% PAE from a +5.0 V supply voltage.
The HMC498 amplifi er can easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. All data is with the chip in a 50 Ohm test fi xture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).
HMC498 Maximum Ratings
| Drain Bias Voltage (Vdd1, Vdd2, Vdd3) | +5.5 Vdc |
| Gate Bias Voltage (Vgg) | -4.0 to 0 Vdc |
| RF Input Power (RFin)(Vdd = +5.0 Vdc) | +20 dBm |
| Channel Temperature | 175 |
| Continuous Pdiss (T= 85 ) (derate 29 mW/°C above 85 ) |
2.65 W |
| Thermal Resistance (channel to die bottom) |
34 /W |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -55 to +85 |
HMC498 Features
·+34 dBm Output IP3
·Saturated Power: +27 dBm @ 25% PAE
·Gain: 24 dB
·Supply Voltage: +5.0 V
·50 Ohm Matched Input/Output
·2.38 mm x 1.46 mm x 0.1 mm
·Saturated Power: +27 dBm @ 25% PAE
·Gain: 24 dB
·Supply Voltage: +5.0 V
·50 Ohm Matched Input/Output
·2.38 mm x 1.46 mm x 0.1 mm
HMC498 Typical Application
The HMC498 is ideal for use as a power amplifi er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
HMC499 General Description
The HMC499 is a high dynamic range GaAs PHEMT MMIC Medium Power Amplifi er which operates between 21 and 32 GHz. The HMC499 provides 16 dB of gain, and an output power of +24 dBm at 1 dB compression from a +5.0 V supply voltage. The HMC499 amplifi er can easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. All data is with the chip in a 50 Ohm test fi xture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).
HMC499 Maximum Ratings
| Drain Bias Voltage (Vdd1, Vdd2, Vdd3) | +5.5 Vdc |
| Gate Bias Voltage (Vgg) | -4.0 to 0 Vdc |
| RF Input Power (RFin)(Vdd = +5.0 Vdc) | +20 dBm |
| Channel Temperature | 175 |
| Continuous Pdiss (T= 85 ) (derate 25 mW/°C above 85 ) |
2.25 W |
| Thermal Resistance (channel to die bottom) |
40/W |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -55 to +85 |
HMC499 Features
+33 dBm Output IP3
+24 dBm P1dB
Gain: 16 dB
Supply Voltage: +5.0 V
50 Ohm Matched Input/Output
2.11 mm x 1.46 mm x 0.1 mm
+24 dBm P1dB
Gain: 16 dB
Supply Voltage: +5.0 V
50 Ohm Matched Input/Output
2.11 mm x 1.46 mm x 0.1 mm
HMC499 Typical Application
The HMC499 is ideal for use as a power amplifi er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
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