HMC505LP4, HMC507LP5, HMC508LP5 Selling Leads, Datasheet
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC505LP4, HMC507LP5, HMC508LP5 Datasheet download
Part Number: HMC505LP4
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC505LP4, HMC507LP5, HMC508LP5 Datasheet download
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: HMC505LP4E
File Size: 350419 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
The HMC505LP4 & HMC505LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifi ers. Covering 6.8 to 7.4 GHz, the VCO's phase noise performance is excellent over temperature, shock and vibration due to the oscillator's monolithic structure. Power output is +11 dBm typical from a single supply of +3V @ 80 mA. The voltage controlled oscillator is packaged in a leadless QFN 4x4 mm surface mount package.
Vcc | +3.5 Vdc |
LO Drive (Vdd = +3V) | 0 to +11V |
Channel Temperature | 135 |
Continuous Pdiss (Ta = 85 ) (derate 3.95 mW/ above 85 ) |
315 mW |
Thermal Resistance (RTH) (junction to package base) |
158/W |
Storage Temperature | -65 to +150 |
Operating Temperature | -55 to +85 |
The HMC507LP5 & HMC507LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC507LP5 & HMC507LP5E integrate resonators, negative resistance devices, varactor diodes and feature a half frequency output. The VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is +13.5 dBm typical from a +5V supply. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.
Vcc | +5.5 Vdc |
Vtune | 0 to +15V |
Junction Temperature | 135 |
Continuous Pdiss (T=85) (derate 26.7 mW/C above 85 |
1.35 W |
Thermal Resistance (junction to ground paddle) |
37 °C/W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 |
ESD Sensitivity (HBM) | Class 1A |
Dual Output: Fo = 6.65 - 7.65 GHz
Fo/2 = 3.325 - 3.825 GHz
Pout: +13.5 dBm
Phase Noise: -115 dBc/Hz @100 kHz Typ.
No External Resonator Needed
QFN Leadless SMT Package, 25 mm2
The HMC508LP5 & HMC508LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC508LP5 & HMC508LP5E integrate resonators, negative resistance devices, varactor diodes and feature a half frequency output. The VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is +15.0 dBm typical from a +5V supply. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.
Vcc | +5.5 Vdc |
Vtune | 0 to +15V |
Junction Temperature | 135 |
Continuous Pdiss (T=85) (derate 28 mW/C above 85 |
1.4 W |
Thermal Resistance (channel to ground paddle) |
35/W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 |
ESD Sensitivity (HBM) | Class 1A |