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HMC517, HMC517LC4, HMC518

Table of contents:
Info of HMC517
Info of HMC517LC4
Info of HMC518

HMC517, HMC517LC4, HMC518 Selling Leads, Datasheet

MFG:HITTITE Package Cooled:N/A D/C:2010+

HMC517, HMC517LC4, HMC518 Datasheet download

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Part Number: HMC517

MFG: HITTITE

Package Cooled: N/A

D/C: 2010+

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HMC517 General Description

The HMC517 chip is a high dynamic range GaAs PHEMT MMIC Low Noise Amplii er (LNA) which covers the 17 to 26 GHz y range. The HMC517 provides 19 dB of small signal gain, 2.2 dB of noise i gure and has an output IP3 greater than +24 . The chip can easily be integrated into hybrid or MCM assemblies due to its small size. All datais tested with the chip in a 50 Ohm test i xture connected via 0.075mm (3 mil) ribbon bonds of minimal length 0.31 mm (12 mil). Two 0.025 mm (1 l) diameter bondwires may also be used to make the RFIN and RFOUT connections.

HMC517 Maximum Ratings

Drain Bias Voltage (Vdd1, Vdd2, Vdd3)	+5.5 Vdc
RF Input Power (RFin)(Vdd = +3.0 Vdc)	+2 dBm
Channel Temperature	175
Continuous Pdiss (T= 85 ) (derate 9.8 mW/C above 85 )	0.88 W
Thermal Resistance (channel to die bottom)	102.6/W
Storage Temperature	-65 to +150
Operating Temperature	-55 to +85
ESD Sensitivity (HBM)	Class 1A

HMC517 Features

·Noise Figure: 2.2 dB
·Gain: 19 dB
·OIP3: +24 dBm
·Single Supply: +3V @ 65 mA
·50 Ohm Matched Input/Output

HMC517 Typical Application

The HMC517 is ideal for use as a LNA or Driver amplii er for:
·Point-to-Point Radios
·Point-to-Multi-Point Radios & VSAT
·Test Equipment and Sensors
·Military & Space

HMC517LC4 General Description

The HMC517LC4 chip is a high dynamic range GaAs PHEMT MMIC Low Noise Amplii er (LNA) housed in a leadless "Pb ree "RoHS compliant SMT package. ThHMC517LC4 provides 19 dB of small signal gain, 2.5 dB of noise i gure and has an put IP3 of +23 dBm. The P1dB output power of +13 dBm enables the LNA to also function as a LO driver for balanced, I/Q rimage reject mixers. The HMC517LC4 allows the use of surface mount manufacturing techniques.

HMC517LC4 Maximum Ratings

Drain Bias Voltage (Vdd1, Vdd2, Vdd3	+5.5 Vdc
RF Input Power (RFin)(Vdd = +3.0 Vdc)	+2 dBm
Channel Temperature	175
Continuous Pdiss (T= 85) (derate 29 mW/ above 85)	2.65 W
Thermal Resistance (channel to die bottom)	34/W
Storage Temperature	-65 to +150
Operating Temperature	-40 to +85
ESD Sensitivity (HBM)	Class 1A

HMC517LC4 Features

`Noise Figure: 2.5 dB
`Gain: 19 dB
`OIP3: +23 dBm
`Single Supply: +3V @ 67 mA
`50 Ohm Matched Input/Output
`RoHS Compliant 4 x 4 mm Package

HMC517LC4 Typical Application

·The HMC517LC4 is ideal for use as a LNA or driver
amplii er for:
·Point-to-Point Radios
·Point-to-Multi-Point Radios & VSAT
·Test Equipment and Sensors
·Military

HMC518 General Description

The HMC518 chip is a high dynamic range GaAs PHEMT MMIC Low Noise Amplii er (LNA) which covers the 20 to 32 GHhz frequency range. The HMC518 provides 15 dB of small signal gain, 3.0 dB of noise i gure and has an output IP3 greater than 23 dBm. The chip can easily be integrated into hybrid or MCM assemblies due to its small size. All data is tested ith the chip in a 50 Ohm test i xture connected via 0.075mm (3 mil) ribbon bonds of minimal length 0.31 mm (12 mil). o .025 mm (1 mil) diameter bondwires may also be used to make the RFIN and RFOUT connections.

HMC518 Maximum Ratings

Drain Bias Voltage (Vdd1, Vdd2, Vdd3)	+5.5 Vdc
RF Input Power (RFin)(Vdd = +3.0 Vdc)	+7 dBm
Junction Temperature	175
Continuous Pdiss (T=85 ) (derate 29mW/C above 85 )	2.65 W
Thermal Resistance (junction to ground paddle)	34 /W
Storage Temperature	-65 to +150
Operating Temperature	-55 to +85
ESD Sensitivity (HBM)	Class 1A

HMC518 Features

·Noise Figure: 3.0 dB
·Gain: 15 dB
·OIP3: 23 dBm
·Single Supply: +3V @ 65 mA
·50 Ohm Matched Input/Output

HMC518 Typical Application

The HMC518 is ideal for use as a LNA or driver amplii er for:
·Point-to-Point Radios
·Point-to-Multi-Point Radios & VSAT
·Test Equipment and Sensors
·Military & Space

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