HMC541LP3, HMC541LP3E, HMC542 Selling Leads, Datasheet
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC541LP3, HMC541LP3E, HMC542 Datasheet download
Part Number: HMC541LP3
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC541LP3, HMC541LP3E, HMC542 Datasheet download
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
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PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
The HMC541LP3 & HMC541LP3E are broadband 1-bit GaAs IC digital attenuators in low cost leadless surface mount packages. This single positive control line digital attenuator utilizes off chip AC ground capacitors for near DC operation, making it suitable for a wide variety of RF and IF applications. Covering DC to 5.0 GHz, the insertion loss is less than 1.0 dB typical. Attenuation accuracy is excellent at ± 0.2 dB typical step error. The attenuator also features a high IIP3 of +50 dBm. One TTL/CMOS control input is used to select the attenuation state. A single Vdd bias of +5V is required.
RF Input Power (DC - 5.0 GHz) | +27 dBm (T = +85 ) |
Control Voltage Range (V1) | -1V to Vdd +1V |
Bias Voltage (Vdd) | +7.0 Vdc |
Channel Temperature | 150 |
Continuous Pdiss (T = 85 ) (derate 14.7 mW/ above 85 ) |
0.96 W |
Thermal Resistance | 68 /W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 |
ESD Sensitivity (HBM) | Class 1B |
The HMC541LP3 & HMC541LP3E are broadband 1-bit GaAs IC digital attenuators in low cost leadless surface mount packages. This single positive control line digital attenuator utilizes off chip AC ground capacitors for near DC operation, making it suitable for a wide variety of RF and IF applications. Covering DC to 5.0 GHz, the insertion loss is less than 1.0 dB typical. Attenuation accuracy is excellent at ± 0.2 dB typical step error. The attenuator also features a high IIP3 of +50 dBm. One TTL/CMOS control input is used to select the attenuation state. A single Vdd bias of +5V is required.
RF Input Power (DC - 5.0 GHz) | +27 dBm (T = +85 ) |
Control Voltage Range (V1) | -1V to Vdd +1V |
Bias Voltage (Vdd) | +7.0 Vdc |
Channel Temperature | 150 |
Continuous Pdiss (T = 85 ) (derate 14.7 mW/ above 85 ) |
0.96 W |
Thermal Resistance | 68 /W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 |
ESD Sensitivity (HBM) | Class 1B |