HMC547LP3, HMC548LP3, HMC548LP3E Selling Leads, Datasheet
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC547LP3, HMC548LP3, HMC548LP3E Datasheet download
Part Number: HMC547LP3
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC547LP3, HMC548LP3, HMC548LP3E Datasheet download
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: HMC547LP3
File Size: 233717 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC548LP3
File Size: 495751 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC548LP3E
File Size: 495751 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
The HMC547LP3 is a general purpose broadband high isolation non-refl ective GaAs MESFET SPDT switch in a low cost leadless QFN surface mount plastic package. Covering DC to 20 GHz, the switch offers high isolation and low insertion loss. The switch features >50 dB isolation up to 5 GHz and >45 dB solation up to 15 GHz. The switch operates using complementary negative control voltage logic lines of -5/0V and requires no bias supply. The HMC547LP3 is packaged in a leadless QFN 3 x 3 mm surface mount package.
RF Input Power (Vctl = -5V) | +23 dBm |
Control Voltage Range (A & B) | +23 dBm |
Hot Switch Power Level (Vctl = -5V) |
+23 dBm |
Channel Temperature | 150 °C |
Continuous Pdiss (T=85°C) (derate 4 mW/°C about 85°C) |
0.26 W |
Thermal Resistance (Insertion Loss Path) |
420 °C/W |
Thermal Resistance (Terminated Path) |
250 °C/W |
Storage Temperature | -65 to +150 °C |
Operating Temperature | -55 to +85 °C |
ESD Sensitivity (HBM) | Class 1C |
The HMC548LP3 & HMC548LP3E are comprised of two internally matched SiGe HBT MMIC low noise amplifi er stages housed in 3x3 mm leadless SMT packages. The unique topology of the HMC548LP3 & HMC548LP3E provides interstage access allowing the designer to place a bandpass fi lter between the two amplifi er stages. This fi ltering approach enables the receiver to reject nearby blocking signals such as those emitted from cellular and 3G hand-helds, without incurring the noise fi gure degradation associated with a high rejection pre-fi lter. When combined with the appropriate interstage bandpass fi lter, this LNA can be used as a receiver pre-amplifi er in various applications from 1.2 to 3.0 GHz. Evaluation boards are available with or without a GPS L1 (1575 MHz) band pass fi lter.
Drain Bias Voltage (Vcc) | +7.0 Vdc |
RF Input Power (RFin)(Vcc = +5.0 Vdc) | -5 dBm |
Junction Temperature | 150 |
Continuous Pdiss (T = 85) (derate 14 mW/ above 85) |
0.942 W |
Thermal Resistance (junction to ground paddle) |
69/W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 |
ESD Sensitivity (HBM) | Class 1A |
The HMC548LP3 & HMC548LP3E are comprised of two internally matched SiGe HBT MMIC low noise amplifi er stages housed in 3x3 mm leadless SMT packages. The unique topology of the HMC548LP3 & HMC548LP3E provides interstage access allowing the designer to place a bandpass fi lter between the two amplifi er stages. This fi ltering approach enables the receiver to reject nearby blocking signals such as those emitted from cellular and 3G hand-helds, without incurring the noise fi gure degradation associated with a high rejection pre-fi lter. When combined with the appropriate interstage bandpass fi lter, this LNA can be used as a receiver pre-amplifi er in various applications from 1.2 to 3.0 GHz. Evaluation boards are available with or without a GPS L1 (1575 MHz) band pass fi lter.
Drain Bias Voltage (Vcc) | +7.0 Vdc |
RF Input Power (RFin)(Vcc = +5.0 Vdc) | -5 dBm |
Junction Temperature | 150 |
Continuous Pdiss (T = 85) (derate 14 mW/ above 85) |
0.942 W |
Thermal Resistance (junction to ground paddle) |
69/W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 |
ESD Sensitivity (HBM) | Class 1A |