HMC558, HMC558LC3B, HMC559 Selling Leads, Datasheet
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC558, HMC558LC3B, HMC559 Datasheet download
Part Number: HMC558
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC558, HMC558LC3B, HMC559 Datasheet download
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
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PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
The HMC559 is a GaAs MMIC PHEMT Distributed Power Amplifi er die which operates between DC and 20 GHz. The amplifi er provides 14 dB of gain, +36 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring 400 mA from a +10V supply. Gain fl atness is slightly positive from 4 to 20 GHz making the HMC559 ideal for EW, ECM and radar driver amplifi er applications.
The HMC559 amplifi er I/O's are internally matched to 50 Ohms facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.075mm (3 mil) ribbon bonds of minimal length 0.31mm (12 mils).
Drain Bias Voltage (Vdd) | +11 Vdc |
Gate Bias Voltage (Vgg1) | -2.0 to 0 Vdc |
Gate Bias Voltage (Vgg2) | +3V to +5V |
RF Input Power (RFin)(Vdd = +10 Vdc) | +30 dBm |
Channel Temperature | 175 °C |
Continuous Pdiss (T= 85 °C) (derate 55 mW/°C above 85 °C) |
5 W |
Thermal Resistance (channel to die bottom) |
18 °C/W |
Operating Temperature | -55 to +85 °C |
Storage Temperature | -65 to +150 °C |
ESD Sensitivity (HBM) | Class 1A |