HMC579, HMC580ST89, HMC580ST89E Selling Leads, Datasheet
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC579, HMC580ST89, HMC580ST89E Datasheet download
Part Number: HMC579
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
HMC579, HMC580ST89, HMC580ST89E
- Table of contents:
Info of HMC579
Info of HMC580ST89
Info of HMC580ST89E
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About HMC1001
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Datasheet: HMC1001
File Size: 236544 KB
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About HMC1001
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
About HMC1001
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
HMC579 General Description
The HMC579 die is a x2 active broadband frequency multiplier utilizing GaAs PHEMT technology. When driven by a +3 dBm signal, the multiplier provides +13 dBm typical output power from 32 to 46 GHz. The Fo isolation is >25 dBc at 38 GHz. The HMC579 is ideal for use in LO multiplier chains for Pt to Pt & VSAT Radios yielding reduced parts count vs. traditional approaches. The low additive SSB Phase Noise of -127 dBc/Hz at 100 kHz offset helps maintain good system noise performance.
HMC579 Maximum Ratings
| RF Input (Vdd = +5V) | +13 dBm |
| Supply Voltage (Vdd1, Vdd2) | +6.0 Vdc |
| Channel Temperature | 175 |
| Continuous Pdiss (Ta = 85 ) (derate 3.95 mW/ above 85 ) |
656 mW |
| Thermal Resistance (junction to ground paddle) |
137 /W |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -40 to +85 |
HMC579 Features
·High Output Power: +13 dBm
·Low Input Power Drive: 0 to +6 dBm
·Fo Isolation: >25 dBc @ Fout= 38 GHz
·100 KHz SSB Phase Noise: -127 dBc/Hz
·Single Supply: +5V@ 70 mA
·Die Size: 1.18 mm x 1.23 mm x 0.1 mm
·Low Input Power Drive: 0 to +6 dBm
·Fo Isolation: >25 dBc @ Fout= 38 GHz
·100 KHz SSB Phase Noise: -127 dBc/Hz
·Single Supply: +5V@ 70 mA
·Die Size: 1.18 mm x 1.23 mm x 0.1 mm
HMC579 Typical Application
The HMC579 is suitable for:
• Clock Generation Applications:
SONET OC-192 & SDH STM-64
• Point-to-Point & VSAT Radios
• Test Instrumentation
• Military EW / Radar
• Space
• Clock Generation Applications:
SONET OC-192 & SDH STM-64
• Point-to-Point & VSAT Radios
• Test Instrumentation
• Military EW / Radar
• Space
HMC580ST89 General Description
The HMC580ST89 & HMC580ST89E are InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi ers covering DC to 1 GHz. Packaged in an industry standard SOT89, the amplifi er can be used as a cascadable 50 Ohm RF or IF gain stage as well as a PA or LO driver with up to +26 dBm output power. The HMC580ST89(E) offers 22 dB of gain with a +37 dBm output IP3 at 250 MHz, and can operate directly from a +5V supply. The HMC580ST89(E) exhibits excellent gain and output power stability over temperature, while requiring a minimal number of external bias components.
HMC580ST89 Maximum Ratings
| Collector Bias Voltage (Vcc) | +5.5 Vdc |
| RF Input Power (RFin)(Vcc = +4.2 Vdc) | +10 dBm |
| Junction Temperature | 150 |
| Continuous Pdiss (T = 85 ) (derate 9 mW/ above 85 ) |
0.59 W |
| Thermal Resistance (junction to lead) |
110 /W |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -40 to +85 |
HMC580ST89 Features
· P1dB Output Power: +22 dBm
· Gain: 22 dB
· Output IP3: +37 dBm
· Cascadable 50 Ohm I/Os
· Single Supply: +5V
· Industry Standard SOT89 Package
· Gain: 22 dB
· Output IP3: +37 dBm
· Cascadable 50 Ohm I/Os
· Single Supply: +5V
· Industry Standard SOT89 Package
HMC580ST89 Typical Application
The HMC580ST89 / HMC580ST89E is an ideal RF/IF gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF & RF Applications
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF & RF Applications
HMC580ST89 Connection Diagram
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