MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:HARRIS D/C:04+
HRFR460, HRFSW1030-03, HRFZ44N Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: HARRIS
D/C: 04+
Description: MOSFET N-CH 55V 49A TO-220AB
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PDF/DataSheet Download
Datasheet: HRF22
File Size: 31687 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HRF22
File Size: 31687 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HRFZ44N
File Size: 138226 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
| Technical/Catalog Information | HRFZ44N |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 49A |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 25A, 10V |
| Input Capacitance (Ciss) @ Vds | 1060pF @ 25V |
| Power - Max | 120W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 75nC @ 20V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | HRFZ44N HRFZ44N |
This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
| Drain to Source Voltage (Note 1) |
VDSS |
55 |
V |
| Drain to Gate Voltage (RGS = 20kW) (Note 1) |
VDGR |
55 |
V |
| Gate to Source Voltage |
VGS |
±20 |
V |
| Drain Current Drain Current |
ID |
49 |
A |
| Drain Current Pulsed Drain Current (Note 2) |
IDM |
160 |
A |
| Pulsed Avalanche Rating |
EAS |
0.227 |
A2s |
| Power Dissipation |
PD |
120 |
W |
| Derate Above 25oC |
0.8 |
W/ | |
| Operating and Storage Temperature |
TJ,TSTG |
-55 to 175 |
|
| Maximum Temperature for Soldering | |||
| Leads at 0.063in (1.6mm) from Case for 10s. |
TL |
300 |
|
| Package Body for 10s, See Techbrief 334 |
Tpkg |
260 |
|
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