MFG:Lite-On Inc Category:Optoelectronics Package Cooled:Original Package D/C:08+/09+
HSDL-3612008, HSDL-4250, HSDL-4251 Datasheet download
Category: Optoelectronics
MFG: Lite-On Inc
Package Cooled: Original Package
D/C: 08+/09+
Description: EMITTER IR 5MM HI POWER 870NM
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PDF/DataSheet Download
Datasheet: HSD1159
File Size: 35365 KB
Manufacturer: HSMC [Hi-Sincerity Mocroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HSD1159
File Size: 35365 KB
Manufacturer: HSMC [Hi-Sincerity Mocroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HSD1159
File Size: 35365 KB
Manufacturer: HSMC [Hi-Sincerity Mocroelectronics]
Download : Click here to Download
| Technical/Catalog Information | HSDL-4250 |
| Vendor | Lite-On Inc |
| Category | Optoelectronics |
| Voltage - Forward (Vf) Typ | 1.4V |
| Current - DC Forward (If) | 100mA |
| Wavelength | 870nm |
| Viewing Angle | 15° |
| Radiant Intensity (Ie) Min @ If | 124mW @ 100mA |
| Mounting Type | Through Hole |
| Package / Case | T 1 3/4 |
| Orientation | Top View |
| Packaging | Bulk |
| Other Names | HSDL 4250 HSDL4250 |
The HSDL-4250 and HSDL-4251 High Performance Infrared emitters were designed for applications that require high power, low forward voltage and high speed. It utilizes Aluminum Galium Arsenide (AlGaAs) LED technology and is optimized for speed and efficiency at emission wavelengths of 870nm. The material used produces high radiant efficiency over a wide range of currents. The emitter is packaged in clear T-1¾ (5mm) package.
| Parameter | Symbol | Minimum | Maximum | Unit |
| Peak Forward Current | IFPK | - | 500 | mA |
| Forward Current Power Dissipation |
IFDC PDISS |
- - |
100 190 |
mA mW |
| Reverse Voltage Storage Temperature LED Junction Temperature |
VR TS TJ |
5 -40 |
- 100 110 |
V |
| Lead Soldering Temperature | 260 for 5 sec |
| Technical/Catalog Information | HSDL-4251 |
| Vendor | Lite-On Inc |
| Category | Optoelectronics |
| Voltage - Forward (Vf) Typ | 1.4V |
| Current - DC Forward (If) | 100mA |
| Wavelength | 870nm |
| Viewing Angle | 30° |
| Radiant Intensity (Ie) Min @ If | 56mW @ 100mA |
| Mounting Type | Through Hole |
| Package / Case | T 1 3/4 |
| Orientation | Top View |
| Packaging | Bulk |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | HSDL 4251 HSDL4251 |
The HSDL-4250 and HSDL-4251 High Performance Infrared emitters were designed for applications that require high power, low forward voltage and high speed. It utilizes Aluminum Galium Arsenide (AlGaAs) LED technology and is optimized for speed and efficiency at emission wavelengths of 870nm. The material used produces high radiant efficiency over a wide range of currents. The emitter is packaged in clear T-1¾ (5mm) package.
| Parameter | Symbol | Minimum | Maximum | Unit |
| Peak Forward Current | IFPK | - | 500 | mA |
| Forward Current Power Dissipation |
IFDC PDISS |
- - |
100 190 |
mA mW |
| Reverse Voltage Storage Temperature LED Junction Temperature |
VR TS TJ |
5 -40 |
- 100 110 |
V |
| Lead Soldering Temperature | 260 for 5 sec |
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