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HUF75309D3ST, HUF75309P3, HUF75309T3ST

Table of contents:
Info of HUF75309D3ST
Info of HUF75309P3
Info of HUF75309T3ST

HUF75309D3ST, HUF75309P3, HUF75309T3ST Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-252(DPAK) D/C:06+

HUF75309D3ST, HUF75309P3, HUF75309T3ST Datasheet download

Five Points

Part Number: HUF75309P3

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-252(DPAK)

D/C: 06+

Description: MOSFET N-CHAN 55V 3A SOT-223

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HUF75309D3ST Parameters

Technical/Catalog Information	HUF75309D3ST
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	19A
Rds On (Max) @ Id, Vgs	70 mOhm @ 19A, 10V
Input Capacitance (Ciss) @ Vds	350pF @ 25V
Power - Max	55W
Packaging	Tube
Gate Charge (Qg) @ Vgs	24nC @ 20V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUF75309D3ST HUF75309D3ST

HUF75309P3 Parameters

Technical/Catalog Information	HUF75309P3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	19A
Rds On (Max) @ Id, Vgs	70 mOhm @ 19A, 10V
Input Capacitance (Ciss) @ Vds	350pF @ 25V
Power - Max	55W
Packaging	Tube
Gate Charge (Qg) @ Vgs	24nC @ 20V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUF75309P3 HUF75309P3

HUF75309P3 General Description

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

HUF75309P3 Maximum Ratings

				UNITS
Drain to Source Voltage (Note 1)		V_DSS	55	V
Drain to Gate Voltage (RGS = 20k) (Note 1)		V_DGR	55	V
Gate to Source Voltage		V_GS	±20	V
Drain Current Continuous (Figure 2).		I_D	19	A
Drain Current Pulsed Drain Current		I_DM	Figure 4
Pulsed Avalanche Rating		E_AS	Figures 6, 14, 15
Power Dissipation		P_D	55	W
Derate Above 25			0.37	W/
Operating and Storage Temperature		T_J,T_STG	-55 to 175
Maximum Temperature for Soldering	Leads at 0.063in (1.6mm) from Case for 10s.	T_L	300
Maximum Temperature for Soldering	Package Body for 10s, See Techbrief 334	T_pkg	260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25 to 150.

HUF75309P3 Features

• 19A, 55V
• Simulation Models
- Temperature Compensated PSPICE^® and SABER^© Models
- SPICE and SABER Thermal Impedance Models Available on the WEB at: www.semi.Intersil.com/families/models.htm
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"

HUF75309T3ST Parameters

Technical/Catalog Information	HUF75309T3ST
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	70 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds	352pF @ 25V
Power - Max	1.1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	23nC @ 20V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUF75309T3ST HUF75309T3ST

HUF75309T3ST General Description

This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

HUF75309T3ST Maximum Ratings

				UNITS
Drain to Source Voltage (Note 1)		V_DSS	55	V
Drain to Gate Voltage (RGS = 20kW) (Note 1)		V_DGR	55	V
Gate to Source Voltage		V_GS	±20	V
Drain Current Continuous (Figure 2).		I_D	3	A
Drain Current Pulsed Drain Current		I_DM	Figure 5
Pulsed Avalanche Rating		E_AS	Figures 6, 14, 15
Power Dissipation		P_D	1.1	W
Derate Above 25oC			9.09	W/
Operating and Storage Temperature		T_J,T_STG	-55 to 175
Maximum Temperature for Soldering	Leads at 0.063in (1.6mm) from Case for 10s.	T_L	300
Maximum Temperature for Soldering	Package Body for 10s, See Techbrief 334	T_pkg	260

HUF75309T3ST Features

• 3A, 55V
• Ultra Low On-Resistance, rDS(ON) = 0.070W
• Diode Exhibits Both High Speed and Soft Recovery
• Temperature Compensating PSPICE™ Model
• Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"

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