HUF75332S3, HUF75333G3, HUF75333P Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:TO-220 D/C:09+
HUF75332S3, HUF75333G3, HUF75333P Datasheet download
Part Number: HUF75332S3
MFG: FAIRCHILD
Package Cooled: TO-220
D/C: 09+
MFG:FAIRCHILD Package Cooled:TO-220 D/C:09+
HUF75332S3, HUF75333G3, HUF75333P Datasheet download
MFG: FAIRCHILD
Package Cooled: TO-220
D/C: 09+
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PDF/DataSheet Download
Datasheet: HUF75332S3S
File Size: 233736 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HUF75333G3
File Size: 111035 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HUF75333P3
File Size: 111035 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
UNITS | ||||
Drain to Source Voltage (Note 1) |
VDSS |
55 |
V | |
Drain to Gate Voltage (RGS = 20k) (Note 1) |
VDGR |
55 |
V | |
Gate to Source Voltage |
VGS |
±20 |
V | |
rain Current Continuous (Figure 2). |
ID |
66 |
A | |
Drain Current Pulsed Drain Current |
IDM |
Figure 4 |
||
Pulsed Avalanche Rating |
EAS |
Figures 6,14,15 |
||
Power Dissipation |
PD |
150 |
W | |
Derate Above 25 |
1 |
W/ | ||
Operating and Storage Temperature |
TJ,TSTG |
-55 to 175 |
||
Maximum Temperature for Soldering | Leads at 0.063in (1.6mm) from Case for 10s. |
TL |
300 |
|
Package Body for 10s, See Techbrief 334 |
Tpkg |
260 |