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HUFA75332S3S, HUFA75333G3, HUFA75337G3

Table of contents:
Info of HUFA75332S3S
Info of HUFA75333G3
Info of HUFA75337G3

HUFA75332S3S, HUFA75333G3, HUFA75337G3 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

HUFA75332S3S, HUFA75333G3, HUFA75337G3 Datasheet download

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Part Number: HUFA75337G3

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: 06+

Description: MOSFET N-CHAN 55V 75A TO-247

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HUFA75332S3S Parameters

Technical/Catalog Information	HUFA75332S3S
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	60A
Rds On (Max) @ Id, Vgs	19 mOhm @ 60A, 10V
Input Capacitance (Ciss) @ Vds	1300pF @ 25V
Power - Max	145W
Packaging	Tube
Gate Charge (Qg) @ Vgs	85nC @ 20V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA75332S3S HUFA75332S3S

HUFA75332S3S General Description

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area,resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Formerly developmental type TA75332.

HUFA75332S3S Maximum Ratings

                                                                                                                             UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . VDSS          55                 V
Drain to Gate Voltage (R_GS = 20k) (Note 1) . . . . . . . . . .V_DGR          55                  V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GS         ±20               V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D            60
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM        Figure 4           A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . .E_AS         Figure 6
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D
Derate Above 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .       145               W
                                                                                                              0.97           W/

Operating and Storage Temperature . . . . . . . . . . . . . . .T_J, T_STG    -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . .T_L         300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . .T_pkg         260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J= 25v to 150.

HUFA75332S3S Features

• 60A, 55V
• Simulation Models
   - Temperature Compensated PSPICE® and SABER™ Models
   - SPICE and SABER Thermal Impedance Models
   Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"

HUFA75333G3 General Description

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Formerly developmental type TA75333

HUFA75333G3 Maximum Ratings

Drain to Source Voltage (Note 1) .......................... V_DSS 55 V
Drain to Gate Voltage (RGS = 20k) (Note 1) .................... V_DGR 55 V
Gate to Source Voltage ............................... V_GS ±20 V
Drain Current
Continuous (Figure 2) ..................................I_D35 A
Pulsed Drain Current ................................I_DM Figure 4
Pulsed Avalanche Rating .........................EAS Figures 6, 14, 15
Power Dissipation ....................................P_D 93W
Derate Above 25 ..................................0.625W/
Operating and Storage Temperature ...................T_J, T_STG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s ......................T_L300
Package Body for 10s, See Techbrief 334.......................T_pkg 260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25 to 150.

HUFA75333G3 Features

• 66A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™ Models
- SPICE and SABER Thermal Impedance ModelsAvailable on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"

HUFA75337G3 Parameters

Technical/Catalog Information	HUFA75337G3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	14 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds	1775pF @ 25V
Power - Max	175W
Packaging	Tube
Gate Charge (Qg) @ Vgs	109nC @ 20V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA75337G3 HUFA75337G3

HUFA75337G3 General Description

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching egulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Formerly developmental type TA75337.

HUFA75337G3 Maximum Ratings

Drain to Source Voltage (Note 1) .......................... V_DSS 55 V
Drain to Gate Voltage (RGS = 20k) (Note 1) .................... V_DGR 55 V
Gate to Source Voltage ............................... V_GS ±20 V
Drain Current
Continuous (Figure 2)...................................I_D75 A
Pulsed Drain Current ................................I_DM Figure 4
Pulsed Avalanche Rating ..............................EAS Figures
Power Dissipation ....................................P_D 93W
Derate Above 25 ..................................1.17 W/
Operating and Storage Temperature ...................T_J, T_STG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s ......................T_L300
Package Body for 10s, See Techbrief 334.......................T_pkg 260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25 to 150.

HUFA75337G3 Features

• 75A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™ Models
- SPICE and SABER Thermal Impedance Models Available on the web at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"

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