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These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Formerly developmental type TA75344.
HUFA75344P3 Maximum Ratings
SYMBOL
HUFA76639P3, HUFA76639S3S
UNITS
Drain to Source Voltage (Note 1)
VDSS
55
V
Drain to Gate Voltage (RGS = 20k) (Note 1)
VDGR
55
V
Gate to Source Voltage
VGS
±20
V
Drain Current Continuous (Figure 2)
ID
75
A
Pulsed Drain Current
IDM
Figure 4
Pulsed Avalanche Rating
UIS
Figures 6
Power Dissipation
PD
285
W
Derate Above 25
1.90
W/
Operating and Storage Temperature
TJ, TSTG
-55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
TL
300
Package Body for 10s, See Techbrief TB334
Tpkg
260
NOTES: 1. TJ = 25 to150 . CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
HUFA75344P3 Features
• 75A, 55V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - Thermal Impedance PSPICE and SABER Models Available on the web at: www.Fairchild.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
HUFA75344S3 Parameters
Technical/Catalog Information
HUFA75344S3
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
55V
Current - Continuous Drain (Id) @ 25° C
75A
Rds On (Max) @ Id, Vgs
8 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds
3200pF @ 25V
Power - Max
285W
Packaging
Tube
Gate Charge (Qg) @ Vgs
210nC @ 20V
Package / Case
TO-262AA
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
HUFA75344S3 HUFA75344S3
HUFA75344S3 General Description
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Formerly developmental type TA75344.
HUFA75344S3 Maximum Ratings
SYMBOL
HUFA76639P3, HUFA76639S3S
UNITS
Drain to Source Voltage (Note 1)
VDSS
55
V
Drain to Gate Voltage (RGS = 20k) (Note 1)
VDGR
55
V
Gate to Source Voltage
VGS
±20
V
Drain Current Continuous (Figure 2)
ID
75
A
Pulsed Drain Current
IDM
Figure 4
Pulsed Avalanche Rating
UIS
Figures 6
Power Dissipation
PD
285
W
Derate Above 25
1.90
W/
Operating and Storage Temperature
TJ, TSTG
-55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
TL
300
Package Body for 10s, See Techbrief TB334
Tpkg
260
NOTES: 1. TJ = 25 to150 . CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
HUFA75344S3 Features
• 75A, 55V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - Thermal Impedance PSPICE and SABER Models Available on the web at: www.Fairchild.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
HUFA75344S3S Parameters
Technical/Catalog Information
HUFA75344S3S
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
55V
Current - Continuous Drain (Id) @ 25° C
75A
Rds On (Max) @ Id, Vgs
8 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds
3200pF @ 25V
Power - Max
285W
Packaging
Tube
Gate Charge (Qg) @ Vgs
210nC @ 20V
Package / Case
D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
HUFA75344S3S HUFA75344S3S
HUFA75344S3S General Description
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Formerly developmental type TA75344.
HUFA75344S3S Maximum Ratings
SYMBOL
HUFA76639P3, HUFA76639S3S
UNITS
Drain to Source Voltage (Note 1)
VDSS
55
V
Drain to Gate Voltage (RGS = 20k) (Note 1)
VDGR
55
V
Gate to Source Voltage
VGS
±20
V
Drain Current Continuous (Figure 2)
ID
75
A
Pulsed Drain Current
IDM
Figure 4
Pulsed Avalanche Rating
UIS
Figures 6
Power Dissipation
PD
285
W
Derate Above 25
1.90
W/
Operating and Storage Temperature
TJ, TSTG
-55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
TL
300
Package Body for 10s, See Techbrief TB334
Tpkg
260
NOTES: 1. TJ = 25 to150 . CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
HUFA75344S3S Features
• 75A, 55V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - Thermal Impedance PSPICE and SABER Models Available on the web at: www.Fairchild.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"