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HUFA76409D3S, HUFA76409D3ST, HUFA76409P3

Table of contents:
Info of HUFA76409D3S
Info of HUFA76409D3ST
Info of HUFA76409P3

HUFA76409D3S, HUFA76409D3ST, HUFA76409P3 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:08+

HUFA76409D3S, HUFA76409D3ST, HUFA76409P3 Datasheet download

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Part Number: HUFA76409P3

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: 08+

Description: MOSFET N-CHAN 60V 18A TO-220AB

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HUFA76409D3S Parameters

Technical/Catalog Information	HUFA76409D3S
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	18A
Rds On (Max) @ Id, Vgs	63 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds	485pF @ 25V
Power - Max	49W
Packaging	Tube
Gate Charge (Qg) @ Vgs	15nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA76409D3S HUFA76409D3S

HUFA76409D3S Maximum Ratings

Drain to Source Voltage (Note 1) .......................... V_DSS60 V
Drain to Gate Voltage (R_GS= 20k) (Note 1) .................... V_DGR 60 V
Gate to Source Voltage ............................... V_GS±16 V
Drain Current
Continuous(T_C= 25, V_GS= 5V) ............................I_D17 A
Continuous (T_A = 25, V_GS = 10V) (Note 2)....................... I_D18A
Continuous (T_C= 135, V_GS= 5V) .......................V.....I_D8A
Continuous (T_A= 135, V_GS = 4.5V) (Figure 2)...................... I_D8A
Pulsed Drain Current................................I_DM Figure 4
Pulsed Avalanche Rating...........................ULS Figure6,17,18
Power Dissipation ...................................PD49W
Derate Above 25 .................................0.327 W/
Operating and Storage Temperature...................T_J, T_STG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s ......................T_L300
Package Body for 10s, See Techbrief 334 ......................T_pkg 260
NOTE:
1. T_J = 25 to 150
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
.

HUFA76409D3S Features

• Ultra Low On-Resistance
- r _DS(ON) = 0.063, V_GS= 10V
- r _DS(ON) = 0.071, V_GS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R_GS Curves

HUFA76409D3ST Parameters

Technical/Catalog Information	HUFA76409D3ST
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	18A
Rds On (Max) @ Id, Vgs	63 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds	485pF @ 25V
Power - Max	49W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	15nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA76409D3ST HUFA76409D3ST

HUFA76409P3 Parameters

Technical/Catalog Information	HUFA76409P3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	18A
Rds On (Max) @ Id, Vgs	62 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds	485pF @ 25V
Power - Max	49W
Packaging	Tube
Gate Charge (Qg) @ Vgs	15nC @ 10V
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA76409P3 HUFA76409P3

HUFA76409P3 Maximum Ratings

Drain to Source Voltage (Note 1) .......................... V_DSS60 V
Drain to Gate Voltage (R_GS= 20k) (Note 1) .................... V_DGR 60 V
Gate to Source Voltage............................... V_GS±16 V
Drain Current
Continuous(T_C= 25, V_GS= 5V).............................I_D17 A
Continuous (TA = 25, VGS = 10V) (Note 2) ...................... I_D18A
Continuous (T_C= 135, V_GS= 5V) .............................I_D8A
Continuous (TA = 135, V_GS = 4.5V) (Figure 2) ..................... I_D8A
Pulsed Drain Current ................................I_DM Figure 4
Pulsed Avalanche Rating ...........................ULS Figure6,17,18
Power Dissipation ...................................PD49W
Derate Above 25 .................................0.327 W/
Operating and Storage Temperature ...................T_J, T_STG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s ......................T_L300
Package Body for 10s, See Techbrief 334 ......................T_pkg 260
NOTE:
1. T_J = 25 to 150
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
.

HUFA76409P3 Features

• Ultra Low On-Resistance
- r _DS(ON) = 0.062, V_GS = 10V
- r _DS(ON) = 0.070, V_GS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves

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