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HY57V161610ETP-I, HY57V161610ET-T, HY57V161610-F

Table of contents:
Info of HY57V161610ETP-I
Info of HY57V161610ET-T
Info of HY57V161610-F

HY57V161610ETP-I, HY57V161610ET-T, HY57V161610-F Selling Leads, Datasheet

MFG:Hynix Package Cooled:TSSOP D/C:07+

HY57V161610ETP-I, HY57V161610ET-T, HY57V161610-F Picture

HY57V161610ETP-I, HY57V161610ET-T, HY57V161610-F Datasheet download

Five Points

Part Number: HY57V161610ETP-I

MFG: Hynix

Package Cooled: TSSOP

D/C: 07+

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HY57V161610ETP-I General Description

THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16.

HY57V161610E is offering fully synchronous operation referenced to a positive edge clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.

Programmable options include the length of pipeline (Read latency of 1,2 or 3), the number of consecutive read or write cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipeline design is not restricted by a `2N` rule.)

HY57V161610ETP-I Maximum Ratings

Parameter	Symbol	Rating	Unit
Ambient Temperature	TA	0 ~ 70
Storage Temperature	TSG	-55 ~ 125
Voltage on Any Pin relative to VSS	VIN, VOUT	-1.0 ~ 4.6	V
Voltage on VDD relative to VSS	VDD,VDDQ	-1.0 ~ 4.6	V
Short Circuit Output Current	IOS	50	mA
Power Dissipation	PD	1	W
Soldering Temperature ⋅ Time	TSOLDER	260 ⋅ 10	⋅ sec

HY57V161610ETP-I Features

• Single 3.0V to 3.6V power supply
• All device pins are compatible with LVTTL interface
• JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch
• All inputs and outputs referenced to positive edge of system clock
• Data mask function by UDQM/LDQM
• Internal two banks operation
• Auto refresh and self refresh
• 4096 refresh cycles / 64ms
• Programmable Burst Length and Burst Type
- 1, 2, 4, 8 and Full Page for Sequence Burst
- 1, 2, 4 and 8 for Interleave Burst
• Programmable CAS Latency ; 1, 2, 3 Clocks
• Pb-free Package

HY57V161610ETP-I Connection Diagram

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