MFG:Other Category:Other
Category: Other
MFG: Other
Description: The HY51C4256 is a high speed,low power 2262,144 x 4 CMOS dynamic random access memory. Fabricated with HYUNDAI CMOS tech...
The HY51C4256 is a high speed,low power 2262,144 x 4 CMOS dynamic random access memory. Fabricated with HYUNDAI CMOS technology,HY51C4256 offers a fast page mode for high data bandwidth, fast usable speed, CMOS standby current and extended RAS-only refresh for low standby power.All inputs and outputs are TTL compatible.Input and output capacitance are significantly lowered to allow increased system performance.
HY51C4256 has many unique features: the first one is low power dissipation. The second one is 512 refresh cycles/8 ms. The third one is fast access time and cycle time. The forth one is fast page mode operation for a sustained data rate up to 20 MHz. The fifth one is high reliability 20 pin 300 mil P-DIP and 20/26 pin SOJ,etc.There are some absolute maximum ratings about it. Ambient temperature(Ta) is 0 to 70. Storage temperature(Tstg) is -55 to 125. Voltage on any pin except VDD relative to Vss(VDD) is -1.0 V to 7.0 V . Data out current(Iout) is 50 mA . Power dissipation(PD) is 1.0 W.
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HY51C4256S-10
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