MFG:Infineon Technologies Category:Discrete Semiconductor Products D/C:07+
IP-B60-CW, IPB60R099CP, IPB60R165CP Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled:
D/C: 07+
Description: MOSFET N-CH 650V 21A D2PAK
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PDF/DataSheet Download
Datasheet: IPB03N03LA
File Size: 325335 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IPB03N03LA
File Size: 325335 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | IPB60R099CP |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 31A |
| Rds On (Max) @ Id, Vgs | 99 mOhm @ 18A, 10V |
| Input Capacitance (Ciss) @ Vds | 2800pF @ 100V |
| Power - Max | 255W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 80nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPB60R099CP IPB60R099CP |
| Parameter | Symbol | Conditions | Value | Unit |
| Continuous drain current | I D | T C=25 °C | 31 | A |
| T C=100 °C | 19 | |||
| Pulsed drain current 2) | I D,pulse | T C=25 °C | 93 | |
| Avalanche energy, single pulse | E AS | I D=11 A, V DD=50 V | 800 | mJ |
| Avalanche energy, repetitive t AR 2),3) |
E AR | I D=11 A, V DD=50 V | 1.2 | |
| Avalanche current, repetitive t AR 2),3) |
I AR | 11 | A | |
| MOSFET dv /dt ruggedness | dv /dt | V DS=0...480 V | 50 | V/ns |
| Gate source voltage | V GS | static | ±20 | V |
| AC (f >1 Hz) | ±30 | |||
| Power dissipation | P tot | T C=25 °C | 255 | W |
| Operating and storage temperature | T j, T stg | -55 ... 150 | °C |
| Technical/Catalog Information | IPB60R165CP |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 21A |
| Rds On (Max) @ Id, Vgs | 165 mOhm @ 12A, 10V |
| Input Capacitance (Ciss) @ Vds | 2000pF @ 100V |
| Power - Max | 192W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 52nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPB60R165CP IPB60R165CP |
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