IPB03N03LB

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power - Max: 150W
Current - Continuous Drain (Id) @ 25° C: 80A
Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 55A, 10V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2V @ 100µA
Gate Charge (Qg) @ Vgs: 59nC @ 5V
Input Capacitance (Ciss) @ Vds: 7624pF @ 15V


Features:

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC¹⁾ for target application
• N-channel - Logic level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• Superior thermal resistance
• 175 operating temperature
• d_v/dt rated
• Pb-free lead plating; RoHS compliant


Specifications

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current	I D	T C=25 2)	80	A
		T C=100	80
Pulsed drain current	I D,pulse	T C=25 3)	320
Avalanche energy, single pulse	E AS	I D=80 A, R GS=25	580	mJ
Reverse diode dv /dt	dv /dt	I D=80 A, V DS=20 V, di /dt =200 A/s, T j,max=175	6	kV/s
Gate source voltage4)	V GS		±20	V
Power dissipation	P tot		150	W
Operating and storage temperature	T j, T stg		-55 ... 175
IEC climatic category; DIN IEC 68-1			55/175/56

Parameters:

Technical/Catalog Information	IPB03N03LB
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	2.8 mOhm @ 55A, 10V
Input Capacitance (Ciss) @ Vds	7624pF @ 15V
Power - Max	150W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	59nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IPB03N03LB IPB03N03LB