MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:MODULE D/C:N/A
IP-B60-CY, IPB60R199CP, IPB60R299CP Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: MODULE
D/C: N/A
Description: MOSFET N-CH 650V 11A TO-263
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PDF/DataSheet Download
Datasheet: IPB03N03LA
File Size: 325335 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IPB03N03LA
File Size: 325335 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | IPB60R199CP |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 16A |
| Rds On (Max) @ Id, Vgs | 199 mOhm @ 9.9A, 10V |
| Input Capacitance (Ciss) @ Vds | 1520pF @ 100V |
| Power - Max | 139W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 43nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPB60R199CP IPB60R199CP |
| Parameter |
Symbol |
Conditions |
Value |
Unit |
| Continuous drain current |
I D |
T C=25 T C=100 |
16 10 |
A |
| Pulsed drain current2) |
I D,pulse |
T C=25 |
51 | |
| Avalanche energy, single pulse |
E AS |
I D=6.6 A, V DD=50 V |
436 |
mJ |
| Avalanche energy, repetitive t AR2),3) |
E AR |
I D=6.6 A, V DD=50 V |
0.66 | |
| Avalanche current, repetitive t AR2),3) |
I AR |
6.6 |
A | |
| MOSFET dv /dt ruggedness |
dv /dt |
V DS=0...480 V |
50 |
V/ns |
| Gate source voltage |
V GS |
static AC (f >1 Hz) |
±20 ±30 |
V |
| Power dissipation |
P tot |
T C=25 |
139 |
W |
| Operating and storage temperature |
T j, T stg |
-55 ... 150 |
| Technical/Catalog Information | IPB60R299CP |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Rds On (Max) @ Id, Vgs | 299 mOhm @ 6.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 1100pF @ 100V |
| Power - Max | 96W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 29nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPB60R299CP IPB60R299CP |
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