MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:MODULE D/C:N/A
IP-B74-CX, IP-B74-CY, IPB77N06S3-09 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: MODULE
D/C: N/A
Description: MOSFET N-CHAN ENH AUTO 55V D2PAK
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PDF/DataSheet Download
Datasheet: IPB77N06S3-09
File Size: 160126 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | IPB77N06S3-09 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 77A |
| Rds On (Max) @ Id, Vgs | 8.8 mOhm @ 39A, 10V |
| Input Capacitance (Ciss) @ Vds | 5335pF @ 25V |
| Power - Max | 107W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 103nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPB77N06S3 09 IPB77N06S309 |
| Parameter | Symbol | Conditions | Value | Unit |
| Continuous drain current | ID | TC=25 °C, VGS=10 V | 77 | A |
| TC=100 °C,VGS=10 V | 55 | |||
| Pulsed drain current | ID,pulse | TC=25 °C | 308 | |
| Avalanche energy, single pulse | EAS | ID=38 A | 170 | mJ |
| Drain gate voltage | VDG | 55 | ||
| Gate source voltage | VGS | ±20 | V | |
| Power dissipation | Ptot | TC=25 °C | 107 | W |
| Operating and storage temperature | Tj, Tstg | -55 ... +175 | °C | |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
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