MFG:Infineon Technologies (VA) Category:Discrete Semiconductor Products Package Cooled:08+ D/C:1216
Info of IPB05N03L | Info of IPB05N03LA | Info of IPB05N03LA G
Category: Discrete Semiconductor Products
MFG: Infineon Technologies (VA)
Package Cooled: 08+
D/C: 1216
Description: MOSFET N-CH 25V 80A D2PAK
1
10
100
2.16000
1.70000
1.44200
2.16
17.00
144.20
Qty: 260
Mentor International Electronic Co.,Ltd., 
Tel: 086-755-21983036
Adddate: 2010-03-20
MFG: Infineon Package Cooled: TO-263 D/C: 04+ Qty: 100000 Note: New in original, stock offer
TONGGUANG (H.K.) ELECTRICS CO., LIMITED 
Tel: +86-755-83996795
Adddate: 2010-03-20
MFG: INFINEON Package Cooled: TO-263 D/C: 08+ Qty: 24950
Contact: Ms.Jenny Fu/George Ming
Tel: 86-755-8268-6456/8268-6500
Adddate: 2010-03-20
MFG: INFINEON Package Cooled: SOT-263 D/C: 09+ Qty: 3000
TOPENDY(HK)ELECTRONICS CO.LIMITED 
Tel: 86-0755-82566468
Adddate: 2010-03-20
MFG: INF Package Cooled: TO- Qty: 4220 Note: Delivery
Golden Harbour Industry Limited 
Tel: 86-755-83651739,83041561
Adddate: 2010-03-20
MFG: INTERSIL Package Cooled: TO-263 D/C: 01+ Qty: 350 Note: http://www.silicon-ic.com
SILICON TECHNOLOGY(HONGKONG)ELECTRONIC LIMITED 
Tel: 86-755-83000558
Adddate: 2010-03-20
MFG: sumitomc Package Cooled: 194
Tel: 86-10-58816651/58816653
Adddate: 2010-03-20
MFG: infineon D/C: 08+ Qty: 1216
Golden Parts Technology Co.,Ltd 
Tel: 86-755-83954357/82546251
Adddate: 2010-03-20
PDF/DataSheet Download
Datasheet: IPB05N03L
File Size: 460436 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
MFG: INFINEON Qty: 15800
Tel: 86-755-28536689
Adddate: 2010-03-20
MFG: INFINEON Package Cooled: TO263-3 D/C: `06+(pb-free) Qty: 8356 Note: new in stock
Contact: Ms.Melody Chen/Julie Chen
Tel: 86-755-82535765
Adddate: 2010-03-20
MFG: INFINEON Package Cooled: TO263-3 D/C: 07+pbfree Qty: 6000
Singo(HK)technology Co.,Limited 
Tel: 0086-0755-82817286
Adddate: 2010-03-20
MFG: INFINEON Package Cooled: TO263-3 D/C: 2008+ Qty: 4000
Tel: 886-0755-83373250
Adddate: 2010-03-20
D/C: N/A Qty: 1000
Tel: 86-755-83753139
Adddate: 2010-03-20
D/C: N/A Qty: 1000
Tel: 86-755-83753139
Adddate: 2010-03-20
D/C: N/A Qty: 1000
Tel: 86-755-83753139
Adddate: 2010-03-20
PDF/DataSheet Download
Datasheet: IPB03N03LA
File Size: 325335 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
MFG: INFINEON Package Cooled: TO263/3 D/C: 03+ Qty: 1660 Note: In stock
B.T.Chips(HONGKONG) Electronics Co.,Ltd 
Tel: 86-0755-29215002 / 26001784
Adddate: 2010-03-20
MFG: INFINEON Package Cooled: TO-263 D/C: 08+ Qty: 24950
Contact: Ms.Jenny Fu/George Ming
Tel: 86-755-8268-6456/8268-6500
Adddate: 2010-03-20
MFG: infineon Package Cooled: D2PAK D/C: 04+ Qty: 6000 Note: new in stock
Tel: 86-760-88228528
Adddate: 2010-03-20
MFG: infineon Package Cooled: D2PAK D/C: 04+ Qty: 6000 Note: avail
Tel: 86-755-33972498
Adddate: 2010-03-20
MFG: INFINEON Package Cooled: 0428+ D/C: TO263 Qty: 277
Bosin (HK) Electronics Limited 
Tel: 86-0755-83640678
Adddate: 2010-03-20
MFG: infineon Package Cooled: D2PAK D/C: 04+ Qty: 6000 Note: new and original stock!
Minshunxin Electronics Co.,LTD. 
Tel: 86-755-82579485
Adddate: 2010-03-20
MFG: INF/04+ Package Cooled: N/A D/C: 4 Qty: 1000
Tel: 86-755-8279-1230
Adddate: 2010-03-20
MFG: -- Package Cooled: infineon D/C: 04+ Qty: D2PAK Note: 6000
Yinke(HK)ELECTRONIC COMPANY LTD 
Tel: 86-755-33279575
Adddate: 2010-03-20
PDF/DataSheet Download
Datasheet: IPB05N03LA
File Size: 356392 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
Continuous drain current1) TC=25°C1) ID ............................80 A
Pulsed drain current TC=25°C IDpuls ....................................320
Avalanche energy, single pulse
ID=55A, VDD=25V, RGS=25Ω EAS .......................................60 mJ
Repetitive avalanche energy, limited by Tjmax 2) EAR .............18
Reverse diode dv/dt
IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C dv/dt ...6 kV/µs
Gate source voltage VGS ...................................................±20 V
Power dissipation TC=25°C Ptot ......................................188 W
Operating and storage temperature Tj , Tstg ......-55 to +175 °C
IEC climatic category; DIN IEC 68-1 ...........................55/175/56
1. Current limited by bondwire ; with an RthJC = 0.8K/W the chip is able to carry ID= 165A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2. Defined by design. Not subject to production test.
· N-Channel
· Logic Level
· Very low on-resistance RDS(on)
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
· Ideal for fast switching buck converters
· The information herein is given to describe certain components and shall not be considered as warranted characteristics.
· Terms of delivery and rights to technical change reserved.
· We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.
· Infineon Technologies is an approved CECC manufacturer.
| Technical/Catalog Information | IPB05N03LA |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 4.6 mOhm @ 55A, 10V |
| Input Capacitance (Ciss) @ Vds | 3110pF @ 15V |
| Power - Max | 94W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 25nC @ 5V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IPB05N03LA IPB05N03LA IPB05N03LAINCT ND IPB05N03LAINCTND IPB05N03LAINCT |
| Parameter | Symbol | Conditions | Value | Unit |
| Continuous drain current | ID | TC=25 ℃2) | 80 | A |
| TC=100 ℃ | 76 | |||
| Pulsed drain current | ID,pulse | TC=25 ℃3) | 385 | |
| Avalanche energy, single pulse | EAS | ID=72 A, RGS=25 Ω | 190 | mJ |
| Reverse diode dv /dt | dv /dt | ID=80 A, VDS=20 V, di /dt =200 A/µs, T j,max=175 ℃ |
6 | kV/µs |
| Gate source voltage4) | VGS | ±20 | V | |
| Power dissipation | Ptot | TC=25 °C | 94 | W |
| Operating and storage temperature | Tj, Tstg | -55 ...175 | ℃ | |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
• N-channel - Logic level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated