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IPB09N03, IPB09N03LA, IPB100N04S2-04

Table of contents:
Info of IPB09N03
Info of IPB09N03LA
Info of IPB100N04S2-04

IPB09N03, IPB09N03LA, IPB100N04S2-04 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:TO-263 D/C:09+

IPB09N03, IPB09N03LA, IPB100N04S2-04 Datasheet download

Five Points

Part Number: IPB09N03LA

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: TO-263

D/C: 09+

Description: MOSFET N-CH 40V 100A TO263-3

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IPB09N03LA Parameters

Technical/Catalog Information	IPB09N03LA
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	8.9 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	1642pF @ 15V
Power - Max	63W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	13nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IPB09N03LA IPB09N03LA IPB09N03LAINCT ND IPB09N03LAINCTND IPB09N03LAINCT

IPB09N03LA Maximum Ratings

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current	I_D	T_C=25 °C	50	A
Continuous drain current	I_D	T_C=100 °C	46	A
Pulsed drain current	I_D,pulse	T_C=25 °C	350	A
Avalanche energy, single pulse	E_AS	I_D=77 A, R_GS=25 Ω	75	mJ
Reverse diode dv /dt	dv /dt	I_D=80 A, V_DS=20 V, di /dt =200 A/µs, T_j,max=175 °C	6	kV/µs
Gate source voltage	V_GS		±20	V
Power dissipation	P_tot	T_C=25 °C	63	W
Operating and storage temperature	T_j, T_stg		-55 ... 175	°C
IEC climatic category; DIN IEC 68-1			55/175/56

IPB09N03LA Features

• Ideal for high-frequency dc/dc converters
• N-channel
• Logic level
• Excellent gate charge x R_DS(on) product (FOM)
• Very low on-resistance R_DS(on)• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated

IPB100N04S2-04 Parameters

Technical/Catalog Information	IPB100N04S2-04
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	100A
Rds On (Max) @ Id, Vgs	3.3 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	5300pF @ 25V
Power - Max	300W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	172nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPB100N04S2 04 IPB100N04S204

IPB100N04S2-04 Maximum Ratings

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current¹⁾	I_D	T _C=25 , V_GS=10 V	100	A
Continuous drain current¹⁾	I_D	T_C=100 , V_GS=10 V²)	100
Pulsed drain current²⁾	I_D,pulse	T _C=25	400
Avalanche energy, single pulse²⁾	E_AS	I _D=80A	810	mJ
Gate source voltage⁴⁾	V_GS		±20	V
Power dissipation	P_tot	T _C=25	300	W
Operating and storage temperature	T_j, T _stg		-55 ... +175

IPB100N04S2-04 Features

• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260 peak reflow
• 175 operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested

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