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IPB13N03LB, IPB13N03LBG, IP-B14-CU

Table of contents:
Info of IPB13N03LB
Info of IPB13N03LBG
Info of IP-B14-CU

IPB13N03LB, IPB13N03LBG, IP-B14-CU Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:TO263-3-2 D/C:06+

IPB13N03LB, IPB13N03LBG, IP-B14-CU Datasheet download

Five Points

Part Number: IPB13N03LB

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: TO263-3-2

D/C: 06+

Description: MOSFET N-CH 30V 30A D2PAK

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IPB13N03LB Parameters

Technical/Catalog Information	IPB13N03LB
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	12.5 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	1355pF @ 15V
Power - Max	52W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	11nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IPB13N03LB IPB13N03LB

IPB13N03LB Maximum Ratings

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current	I _D	T _C=25 ²⁾	50	A
Continuous drain current	I _D	T _C=100	50
Pulsed drain current	I _D,pulse	T _C=25 ³⁾	200
Avalanche energy, single pulse	E _AS	I _D=50 A, R_GS=25	164	mJ
Reverse diode dv /dt	dv /dt	I_D=50 A, V _DS=20 V, di /dt =200 A/s, T_j,max=175	6	kV/s
Gate source voltage⁴⁾	V _GS		±20	V
Power dissipation	P_tot	T _C=25	83	W
Operating and storage temperature	T_j, T _stg		-55 ... 175
IEC climatic category; DIN IEC 68-1			55/175/56

1) J-STD20 and JESD22

IPB13N03LB Features

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC¹) for target applications
• N-channel - Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant

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