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IPB80N04S2-04, IPB80N04S2-H4, IPB80N04S2H4XT

IPB80N04S2-04, IPB80N04S2-H4, IPB80N04S2H4XT Selling Leads, Datasheet

MFG:Infineon Technologies  Category:Discrete Semiconductor Products  Package Cooled:TO263-3-2  D/C:06+

IPB80N04S2-04, IPB80N04S2-H4, IPB80N04S2H4XT Picture

IPB80N04S2-04, IPB80N04S2-H4, IPB80N04S2H4XT Datasheet download

Five Points

Part Number: IPB80N04S2-04

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: TO263-3-2

D/C: 06+

Description: MOSFET N-CH 40V 80A TO263-3

 

 
 
 
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IPB80N04S2-04 Suppliers

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  • IPB80N04S2-04

  • Vendor: Infineon Pack: TO D/C: 09+& Qty: 600  Adddate: 2024-05-01
  • Inquire Now
  • EK   China
    Contact: Mr.kevin  
    Tel: +86-755-111111111
    Fax:
    (1)
  • IPB03N03LA

  • Vendor: Infineon Pack: TO D/C: 09+& Qty: 100  Adddate: 2024-05-01
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  • EK   China
    Contact: Mr.kevin  
    Tel: +86-755-111111111
    Fax:
    (1)
  • IPB05N03L

  • Vendor: Infineon Pack: TO D/C: 09+& Qty: 250  Adddate: 2024-05-01
  • Inquire Now
  • EK   China
    Contact: Mr.kevin  
    Tel: +86-755-111111111
    Fax:
    (1)

About IPB03N03LA

PDF/DataSheet Download

Datasheet: IPB03N03LA

File Size: 325335 KB

Manufacturer: INFINEON [Infineon Technologies AG]

Download : Click here to Download

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IPB80N04S2-H4 Suppliers

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  • IPB03N03LA

  • Vendor: Infineon Pack: TO D/C: 09+& Qty: 100  Adddate: 2024-05-01
  • Inquire Now
  • EK   China
    Contact: Mr.kevin  
    Tel: +86-755-111111111
    Fax:
    (1)
  • IPB05N03L

  • Vendor: Infineon Pack: TO D/C: 09+& Qty: 250  Adddate: 2024-05-01
  • Inquire Now
  • EK   China
    Contact: Mr.kevin  
    Tel: +86-755-111111111
    Fax:
    (1)

About IPB03N03LA

PDF/DataSheet Download

Datasheet: IPB03N03LA

File Size: 325335 KB

Manufacturer: INFINEON [Infineon Technologies AG]

Download : Click here to Download

Related PDF Download

Related Part Number

IPB80N04S2H4XT Suppliers

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  • IPB03N03LA

  • Vendor: Infineon Pack: TO D/C: 09+& Qty: 100  Adddate: 2024-05-01
  • Inquire Now
  • EK   China
    Contact: Mr.kevin  
    Tel: +86-755-111111111
    Fax:
    (1)
  • IPB05N03L

  • Vendor: Infineon Pack: TO D/C: 09+& Qty: 250  Adddate: 2024-05-01
  • Inquire Now
  • EK   China
    Contact: Mr.kevin  
    Tel: +86-755-111111111
    Fax:
    (1)

About IPB03N03LA

PDF/DataSheet Download

Datasheet: IPB03N03LA

File Size: 325335 KB

Manufacturer: INFINEON [Infineon Technologies AG]

Download : Click here to Download

Related PDF Download

Related Part Number

IPB80N04S2-04 Parameters

Technical/Catalog InformationIPB80N04S2-04
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs3.4 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 5300pF @ 25V
Power - Max300W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs170nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB80N04S2 04
IPB80N04S204

IPB80N04S2-04 Maximum Ratings

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
ID
TC=25,VGS=10 V
80
A
80
A
Pulsed drain current
ID,pulse
TC=25
320
A
Avalanche energy, single pulse2
EAS
ID=80A
660
mJ
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
TC=25
300
W
Operating and storage temperature
Tj,Tstg
-55 .. +175
IEC climatic category; DIN IEC 68-1
55/175/56

IPB80N04S2-04 Features

• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260 peak reflow
• 175 operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested

IPB80N04S2-H4 Parameters

Technical/Catalog InformationIPB80N04S2-H4
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs3.7 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 4400pF @ 25V
Power - Max300W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs148nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB80N04S2 H4
IPB80N04S2H4

IPB80N04S2-H4 Maximum Ratings

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
ID
TC=25,VGS=10 V
80
A
 
80
A
Pulsed drain current
ID,pulse
TC=25
320
A
Avalanche energy, single pulse2
EAS
ID=80A
660
mJ
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
TC=25
300
W
Operating and storage temperature
Tj,Tstg
-55 .. +175
IEC climatic category; DIN IEC 68-1
55/175/56

IPB80N04S2-H4 Features

• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260 peak reflow
• 175 operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested

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