Position: Home > DataSheet > Index I > IPB Series > IPB80N06S3L-08, IPB80N08S2-07, IPB80N08S2L-07

Low Cost Custom Prototype PCB Manufacturer

IPB80N06S3L-08, IPB80N08S2-07, IPB80N08S2L-07

Table of contents:
Info of IPB80N06S3L-08
Info of IPB80N08S2-07
Info of IPB80N08S2L-07

IPB80N06S3L-08, IPB80N08S2-07, IPB80N08S2L-07 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:TO263-3-2 D/C:06+

IPB80N06S3L-08, IPB80N08S2-07, IPB80N08S2L-07 Picture

IPB80N06S3L-08, IPB80N08S2-07, IPB80N08S2L-07 Datasheet download

Five Points

Part Number: IPB80N06S3L-08

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: TO263-3-2

D/C: 06+

Description: MOSFET N-CH 75V 80A TO263-3

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

Top Sellers:

TOP

IPB80N06S3L-08 Maximum Ratings

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current¹⁾	I_D	T _C=25 , V_GS=10 V	80	A
Continuous drain current¹⁾	I_D	T_C=100 , V_GS=10 V²)	61
Pulsed drain current²⁾	I_D,pulse	T _C=25	320
Avalanche energy, single pulse²⁾	E_AS	I _D=80A	170	mJ
Drain gate voltage²⁾	V_DG		55	V
Gate source voltage⁴⁾	V_GS		±16	V
Power dissipation	P_tot	T _C=25	105	W
Operating and storage temperature	T_j, T _stg		-55 ... +175
IEC climatic category; DIN IEC 68-1			55/175/56

IPB80N06S3L-08 Features

• N-channel - Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260peak reflow
• 175 operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
• ESD Class 2 (HBM) EIA/JESD22-A114-B

IPB80N08S2-07 Parameters

Technical/Catalog Information	IPB80N08S2-07
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	7.1 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	4700pF @ 25V
Power - Max	300W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	180nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPB80N08S2 07 IPB80N08S207

IPB80N08S2-07 Maximum Ratings

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current¹⁾	I_D	T_C=25 °C, V_GS=10 V	80	A
Continuous drain current¹⁾	I_D	T_C=100 °C, V_GS=10 V2)	80
Pulsed drain current²⁾	I_D,pulse	T_C=25 °C	320
Avalanche energy, single pulse²⁾	E_AS	I_D=80A	810	mJ
Gate source voltage4)	V_GS		±20	V
Power dissipation	P_tot	T_C=25 °C	300	W
Operating and storage temperature	T_j,T_stg		-55 ..+175	°C
IEC climatic category; DIN IEC 68-1			55/175/56

IPB80N08S2-07 Features

• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested

IPB80N08S2L-07 Parameters

Technical/Catalog Information	IPB80N08S2L-07
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	6.8 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	5400pF @ 25V
Power - Max	300W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	233nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPB80N08S2L 07 IPB80N08S2L07

IPB80N08S2L-07 Maximum Ratings

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current¹⁾	I_D	T _C=25 , V_GS=10 V	80	A
Continuous drain current¹⁾	I_D	T_C=100 , V_GS=10 V²)	80
Pulsed drain current²⁾	I_D,pulse	T _C=25	320
Avalanche energy, single pulse²⁾	E_AS	I _D=80A	810	mJ
Gate source voltage⁴⁾	V_GS		±20	V
Power dissipation	P_tot	T _C=25	300	W
Operating and storage temperature	T_j, T _stg		-55 ... +175

IPB80N08S2L-07 Features

• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260 peak reflow
• 175 operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested

Hotspot Suppliers Product

Product List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

MT58L64L18CT-10

Price: 4-6 USD

MT58L64L18CT-10 TQFP100
DL-7140-211M

Price: 5-6.5 USD

DL-7140-211M laser tube
74LVC74APG

Price: 4-5 USD

74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2

Price: 6.5-8 USD

CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX

Price: 0.284-0.286 USD

PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2

Price: 1-2 USD

IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB

Price: 1-2 USD

a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1

Price: 0.124-0.2 USD

PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L

Price: 0.177-0.178 USD

RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A

Price: 0.053-0.055 USD

STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013

Price: 1.45-1.5 USD

STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B

Price: 0.073-0.075 USD

SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components