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IPP05CN10NG, IPP05N03L, IPP05N03LA

Table of contents:
Info of IPP05CN10NG
Info of IPP05N03L
Info of IPP05N03LA

IPP05CN10NG, IPP05N03L, IPP05N03LA Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:TO220 D/C:06+

IPP05CN10NG, IPP05N03L, IPP05N03LA Datasheet download

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Part Number: IPP05N03LA

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: TO220

D/C: 06+

Description: MOSFET N-CH 25V 80A TO-220AB

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IPP05N03L Maximum Ratings

Continuous drain current¹⁾ TC=25°C¹⁾ I_D ............................80 A
Pulsed drain current TC=25°C I_Dpuls ....................................320
Avalanche energy, single pulse
I_D=55A, V_DD=25V, R_GS=25 E_AS .......................................60 mJ
Repetitive avalanche energy, limited by T_jmax ²⁾ E_AR .............18
Reverse diode dv/dt
I_S=80A, V_DS=24V, di/dt=200A/µs, T_jmax=175°C dv/dt ...6 kV/µs
Gate source voltage V_GS ...................................................±20 V
Power dissipation T_C=25°C Ptot ......................................188 W
Operating and storage temperature T_j, T_stg ......-55 to +175 °C
IEC climatic category; DIN IEC 68-1 ...........................55/175/56

1. Current limited by bondwire ; with an RthJC = 0.8K/W the chip is able to carry ID= 165A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2. Defined by design. Not subject to production test.

IPP05N03L Features

· N-Channel
· Logic Level
· Very low on-resistance RDS(on)
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
· Ideal for fast switching buck converters

IPP05N03L Typical Application

· The information herein is given to describe certain components and shall not be considered as warranted characteristics.
· Terms of delivery and rights to technical change reserved.
· We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.
· Infineon Technologies is an approved CECC manufacturer.

IPP05N03LA Parameters

Technical/Catalog Information	IPP05N03LA
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	4.9 mOhm @ 55A, 10V
Input Capacitance (Ciss) @ Vds	3110pF @ 15V
Power - Max	94W
Packaging	Tube
Gate Charge (Qg) @ Vgs	25nC @ 5V
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IPP05N03LA IPP05N03LA IPP05N03LAIN ND IPP05N03LAINND IPP05N03LAIN

IPP05N03LA Maximum Ratings

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current	I_D	T_C=25 ²)	80	A
Continuous drain current	I_D	T_C=100	76
Pulsed drain current	I_D,pulse	T_C=25 ³)	385
Avalanche energy, single pulse	E_AS	I_D=72 A, R_GS=25 Ω	190	mJ
Reverse diode dv /dt	dv /dt	I_D=80 A, V_DS=20 V, di /dt =200 A/µs, T _j,max=175	6	kV/µs
Gate source voltage⁴)	V_GS		±20	V
Power dissipation	P_tot	T_C=25 °C	94	W
Operating and storage temperature	T_j, T_stg		-55 ...175
IEC climatic category; DIN IEC 68-1			55/175/56

IPP05N03LA Features

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC¹) for target application
• N-channel - Logic level
• Excellent gate charge x R_DS(on) product (FOM)
• Very low on-resistance R_DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated

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