IRCW211.8KLFTR, IRCZ24, IRCZ34 Selling Leads, Datasheet
MFG:VISHAY Package Cooled:05+ D/C:5000/REEL
IRCW211.8KLFTR, IRCZ24, IRCZ34 Datasheet download
Part Number: IRCW211.8KLFTR
MFG: VISHAY
Package Cooled: 05+
D/C: 5000/REEL
IRCW211.8KLFTR, IRCZ24, IRCZ34
- Table of contents:
Info of IRCW211.8KLFTR
Info of IRCZ24
Info of IRCZ34
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About IRC503
PDF/DataSheet Download
Datasheet: IRC503
File Size: 231452 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRCZ24
PDF/DataSheet Download
Datasheet: IRCZ24
File Size: 149286 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRCZ34
PDF/DataSheet Download
Datasheet: IRCZ34
File Size: 134106 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRCZ24 General Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and cost-effectiveness.
The HEXSence device provides an accurate fraction of the drain current through the additional two leads to be used for control or protection of the device. These devices exhibit similar electrical and thermal characteristics as their IRF-seriesequivalent part numbers. The provision of a kelvin source connection effectively eliminates problems of common source inductance when the HEXSence is used as a fast, high-current switch in non current-sensing applications.
IRCZ24 Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TC =25 | Continuous Drain Current,VGS @ 10V | 17 | A |
| ID @ TC =100 | Continuous Drain Current,VGS @ 10V | 12 | |
| IDM | Pulsed Drain Current | 68 | |
| ID @ TC =100 | Power Dissipation | 60 | W |
| Linear Derating Factor | 0.40 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 6.0 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 4.5 | A |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
| Mounting Torque, 6-32 or screw | 10 lbf.in (1.1 N.m) |
IRCZ24 Features
` Dynamic dv/dt Rating
` Current Sense
` 175 Operating Temperatur
` Fast Switching
` Eimple Drive Requirements
` Current Sense
` 175 Operating Temperatur
` Fast Switching
` Eimple Drive Requirements
IRCZ34 General Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and cost-effectiveness.
The HEXSence device provides an accurate fraction of the drain current through the additional two leads to be used for control or protection of the device. These devices exhibit similar electrical and thermal characteristics as their IRF-series equivalent part numbers. The provision of a kelvin source connection effectively eliminates problems of common source inductance when the HEXSence is used as a fast, high-current switch in non current-sensing applications.
IRCZ34 Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TC =25 | Continuous Drain Current,VGS @ 10V | 30 | A |
| ID @ TC =100 | Continuous Drain Current,VGS @ 10V | 21 | |
| IDM | Pulsed Drain Current | 120 | |
| ID @ TC =100 | Power Dissipation | 88 | W |
| Linear Derating Factor | 0.59 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 15 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 4.5 | A |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
| Mounting Torque, 6-32 or screw | 10 lbf.in (1.1 N.m) |
IRCZ34 Features
`Dynamic dv/dt Rating
`Current Sense
`175 Operating Temperatur
`Fast Switching
`Ease of Paralleling
`Simple Drive Requirements
`Current Sense
`175 Operating Temperatur
`Fast Switching
`Ease of Paralleling
`Simple Drive Requirements
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