IRC840PBF

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-220
Continuous Drain Current : 8 A
Configuration : Single Dual Source
Resistance Drain-Source RDS (on) : 0.85 Ohms


Description

The IRC840PbF is designed as the third generation HEXFET from international rectifier which provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The seven features of the IRC840PbF. (1)Dynamic dv/dt rating. (2)Repetitive avalanche rated. (3)Current sense. (4)Fast switching. (5)EAse of paralleling. (6)Simple drive requirements. (7)It would be lead-free. That are all the main features.

Some absolute maximum ratings of the IRC840PbF have been concluded into several points as follow. (1)Its continuous drain current at Vgs=10V would be 8.0A at 25°C and would be 5.1A at 100°C. (2)Its pulse collector current would be 32A. (3)power dissipation would be 125W. (4)Its linear derating factor is 1.0W/°C. (5)Its gate to source voltage would be +/-20V. (6)Its single pulse avalanche energy would be 210mJ. (7)Its repetitive avalanche energy would be 13mJ. (8)Its peak diode recovery dv/dt would be 3.5V/ns. (9)Its operating junction and storage temperature range would be from -55°C to +150°C. (10)Its soldering temperature for 10 seconds would be 300°C (1.6mm from case). It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics about the IRC840PbF. (1)Its drain to source breakdown voltage would be min 500V. (2)Its temperature coeff. of breakdown voltage would be typ 0.78V/°C. (3)Its static drain to source on-resistance would be max 0.85 ohms. (4)Its gate threshold voltage would be min 2.0V and max 4.0V. (5)Its forward transconductance would be min 5.4S. (6)Its drain to source leakage current would be max 25uA at Vds=50V, Vgs=0 and would be max 250uA at Vds=400V and Vgs=0, Tj=125°C. (7)Its gate to source forward leakage would be max 100nA. (8)Its gate to source reverse leakage would be max -100nA. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!