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Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. TheD2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF1010EL) is available for low- profile applications.
IRF1010ES Maximum Ratings
Parameter
Max.
Units
ID @ TC =25
Continuous Drain Current,VGS @ 10V
84
A
ID @ TC =100
Continuous Drain Current,VGS @ 10V
59
IDM
Pulsed Drain Current
330
PD @ TC =25
Power Dissipation
200
W
Linear Derating Factor
1.4
W/
VGS
Gate-to-Source Voltage
±20
V
IAR
Avalanche Current
50
A
EAR
Repetitive Avalanche Energy
17
mJ
dv/dt
Peak Diode Recovery dv/dt
4.0
V/ns
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw
10 lbf.in (1.1 N.m)
IRF1010ES Features
`Advanced Process Technology `Surface Mount (IRF1010ES) `Low-profile through-hole (IRF1010EL `175 Operating Temperature `Fast Switching `Fully Avalanche Rated
IRF1010ESPBF Parameters
Technical/Catalog Information
IRF1010ESPBF
Vendor
International Rectifier
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25° C
84A
Rds On (Max) @ Id, Vgs
12 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds
3210pF @ 25V
Power - Max
200W
Packaging
Tube
Gate Charge (Qg) @ Vgs
130nC @ 10V
Package / Case
D²Pak, TO-263 (2 leads + tab)
FET Feature
Standard
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IRF1010ESPBF IRF1010ESPBF
IRF1010ESPBF General Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF1010EL) is available for lowprofile applications.
IRF1010ESPBF Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
84
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
59
IDM
Pulsed Drain Current
330
PD @TC = 25°C
Power Dissipation
200
W
Linear Derating Factor
1.4
W/
VGS
Gate-to-Source Voltage
±20
V
IAR
Avalanche Current
50
A
EAR
Repetitive Avalanche Energy
17
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew
10 lbf?in (1.1N?m)
IRF1010ESPBF Features
· Advanced Process Technology · Surface Mount (IRF1010ES) · Low-profile through-hole (IRF1010EL) · 175°C Operating Temperature · Fast Switching · Fully Avalanche Rated · Lead-Free
